TEST CIRCUIT AND METHOD FOR SEMICONDUCTOR DEVICE

• US 20140368224A1
• Filed: 10/22/2013
• Published: 12/18/2014
• Est. Priority Date: 06/18/2013
• Status: Active Grant

• Current Assignee: SK Hynix Inc.
• Original Assignee: SK Hynix Inc.
• Inventors: LEE, Dong-Uk
• Granted Patent: US 9,702,931 B2
• Time in Patent Office: Days
• US Class Current: 324/713
• CPC Class Codes: G01R 27/205 Measuring contact resistance of connections, e.g. of earth connections
• CPC Class Codes: G01R 31/31717 Interconnect testing by scan techniques see G01R31/31855
• CPC Class Codes: G01R 31/318513 Test of Multi-Chip-Moduls
• CPC Class Codes: G11C 29/025 in signal lines
• CPC Class Codes: G11C 29/50008 of impedance
• CPC Class Codes: H01L 22/34 Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line switching, multiplexing, gating devices G01R19/25; process control with lithography, e.g. dose control, G03F7/20; structures for alignment control by optical means G03F7/70633

Abstract

A semiconductor device includes a first die, a second die coupled to the first die through a Through-Silicon-Via (TSV), and a test circuit suitable for measuring a resistance of the TSV by controlling an amount of current flowing through the TSV.

Claims

1. A semiconductor device comprising:

a first die;

a second die coupled to the first die through a Through-Silicon-Via (TSV); and

a test circuit suitable for measuring a resistance of the TSV by controlling an amount of current flowing through the TSV.

2. The semiconductor device of claim 1, wherein the test circuit includes:

a current source unit suitable for supplying a variable current flowing through the TSV in response to a control signal; and

a measuring block suitable for measuring the resistance of the TSV based on the variable current.

3. The semiconductor device of claim 2, wherein the wring block includes:

a current sink unit suitable for generating a measurement voltage, which has a level that depends on the variable current in response to the control signal; and

a resistance measuring unit suitable for measuring the resistance of the TSV based on the measurement voltage.

4. The semiconductor device of claim 3, wherein the resistance measuring unit includes:

a voltage measurer suitable for measuring the measurement voltage; and

a current measurer suitable for converting the measurement voltage into a converted current and for measuring the converted current.

5. The semiconductor device of claim 4, wherein the current measurer includes an offset canceller suitable for removing an offset of the measurement voltage.

6. The semiconductor device of claim 2, wherein the measuring block is disposed in the first die.

7. The semiconductor device of claim 2, wherein the current source unit is disposed in the second die.

8. A semiconductor device comprising:

a first die;

a plurality of second dies, each of which is coupled to the first die through a Through-Silicon-Via (TSV);

a current source suitable for supplying a first current in response to a first control signal and for supplying a second current in response to a second control signal, the first current and the second current flows through the TSV, and the current source is disposed in each of the second dies;

a current sink suitable for generating a measurement voltage, which has a level that depends on the first current or depends on both of the first current and the second current, the current sink is disposed in the first die; and

a resistance measurer suitable for measuring a resistance of the TSV based on the measurement voltage.

9. The semiconductor device of claim 8, wherein the current sink includes:

a first current sink suitable for generating the measurement voltage corresponding to the first current in response to the first control signal; and

a second current sink suitable for generating the measurement voltage corresponding to the second current in response to the second control signal.

10. The semiconductor device of claim 8, wherein the resistance measurer includes:

a voltage measurer suitable for measuring the measurement voltage; and

a current measurer suitable for converting the measurement voltage into a converted current and for measuring the converted current.

11. The semiconductor device of claim 10, wherein the current measurer includes an offset canceller for removing an offset of the measurement voltage.

12. The semiconductor device of claim 8, wherein the current sink is sufficiently provided to respectively correspond to the second dies.

13. The semiconductor device of claim 8, wherein the resistance measurer includes:

a switch suitable for selecting the measurement voltage corresponding to the current flowing through the TSV to be measured among the TSVs corresponding to the second dies.

14. A method for measuring a resistance of a Through-Silicon-Via (TSV) in a semiconductor device including a first die and a second die that are electrically connected to each other through the TSV, the method comprising:

supplying a first current to the first die from the second die through the TSV;

measuring the first current through the TSV at the first die;

supplying the first current and a second current to the first die from the second the through the TSV;

measuring a sum of the first and the second current through the TSV at the first die; and

obtaining the resistance of the TSV based on a difference between the measured first current and the measured sum of the first and second current.

15. The method of claim 14, wherein the measuring of the first current through the TSV at the first die and the measuring of the second current through the TSV at the first die include:

measuring a voltage corresponding to the first current and a voltage corresponding to the second current.