SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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Accused Products
Abstract
A step for forming an island-shaped semiconductor layer of a semiconductor device used in a display device is omitted in order to manufacture the semiconductor device with high productivity and low cost. The semiconductor device is manufactured through four photolithography processes: four steps for forming a gate electrode, for forming a source electrode and a drain electrode, for forming a contact hole, and for forming a pixel electrode. In the step for forming the contact hole, a groove portion in which a semiconductor layer is removed is formed, whereby formation of a parasitic transistor is prevented. An oxide semiconductor is used as a material of the semiconductor layer in which a channel is formed, and an oxide semiconductor having a higher insulating property than the semiconductor layer is provided over the semiconductor layer.
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Citations
10 Claims
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1. (canceled)
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2. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode over a substrate by a first photolithography process; forming a gate insulating layer over the gate electrode; forming a semiconductor layer including a first oxide semiconductor over the gate insulating layer; forming a source electrode and a drain electrode over the semiconductor layer by a second photolithography process; forming a layer including a second oxide semiconductor having a higher insulating property than the semiconductor layer over the source electrode and the drain electrode; forming a contact hole by selectively removing a portion of the layer that overlaps with the drain electrode and forming a groove portion by removing a portion of the layer, the semiconductor layer, and the gate insulating layer, by a third photolithography process; and forming a pixel electrode over the layer by a fourth photolithography process. - View Dependent Claims (3, 4, 5)
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6. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating layer over the gate electrode; forming a semiconductor layer including a first oxide semiconductor over the gate insulating layer; forming a source electrode and a drain electrode over the semiconductor layer; forming a layer including a second oxide semiconductor having a higher insulating property than the semiconductor layer over the source electrode and the drain electrode; forming a contact hole by selectively removing a portion of the layer that overlaps with the drain electrode; and forming a pixel electrode over the layer. - View Dependent Claims (7, 8, 9, 10)
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Specification