Superlattice Structures and Infrared Detector Devices Incorporating the Same

• US 20140374701A1
• Filed: 06/24/2014
• Published: 12/25/2014
• Est. Priority Date: 06/25/2013
• Status: Active Grant

• Current Assignee: L3harris Cincinnati Electronics Corporation (L3Harris Technologies, Inc.)
• Original Assignee: L-3 Communications Cincinnati Electronics Corporation (L3Harris Technologies, Inc.)
• Inventors: Wei, Yajun
• Granted Patent: US 9,196,769 B2
• Time in Patent Office: Days
• US Class Current: 257/18
• CPC Class Codes: H01L 31/03046 including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
• CPC Class Codes: H01L 31/035236 Superlattices; Multiple quantum well structures
• CPC Class Codes: H01L 31/101 Devices sensitive to infrared, visible or ultraviolet radiation
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials

Abstract

Embodiments of strain-balanced superlattice infrared detector devices and their fabrication are disclosed. In one embodiment, an infrared detector device includes a first contact layer, and absorber superlattice region, a wider gap unipolar barrier region, and a second contact layer. The absorber superlattice region has a period defined by a first InAs layer, strain-balancing structure, a second InAs layer, and an InAsSb layer. The strain-balancing structure comprises an arbitrary alloy layer sequence containing at least one constituent element of aluminum or phosphor, e.g., InGaAs, AlInAs InAsP. In another embodiment, the absorber superlattice region has a period defined by a first InAs layer, first strain-balancing structure, a second InAs layer, a first GaSb layer, a second strain-balancing structure, and a second GaSb layer. The first strain-balancing structure includes at least one constituent element of aluminum or phosphor, e.g., InGaAs, AlInAs InAsP. The second strain-balancing structure includes GaInSb and GaSb.

Claims

1. An infrared detector device comprising:

a first contact layer;

an absorber superlattice region having a period defined by a first InAs layer, a strain-balancing structure, a second InAs layer, and an InAsSb layer, wherein the strain-balancing structure comprises an arbitrary alloy sequence comprising at least one constituent element of aluminum and phosphorus;

a unipolar electron or hole barrier layer adjacent to the absorber superlattice region; and

a second contact layer adjacent to the unipolar electron or hole barrier layer.

2. The infrared detector device as claimed in claim 1, wherein the strain-balancing structure comprises a first InGaAs layer, an AlInAs layer, and a second InGaAs layer.

3. The infrared detector device as claimed in claim 1, wherein:

the absorber superlattice region is doped p-type; and

one or more layers of the absorber superlattice region comprise aluminum, wherein the aluminum provides for self passivation that prevents formation of an electrical short on sidewalls of the infrared detector device.

4. The infrared detector device as claimed in claim 1, wherein:

the absorber superlattice region is doped p-type; and

the unipolar electron or hole barrier layer is a unipolar hole barrier layer that comprises aluminum, wherein the aluminum provides for self passivation that prevents formation of an electrical short on sidewalls of the infrared detector device.

5. The infrared detector device as claimed in claim 4, wherein one or more layers of the absorber superlattice region comprises aluminum.

6. An infrared detector device comprising:

a first contact layer;

an absorber superlattice region, the absorber superlattice region having a period defined by a first InAs layer, a strain-balancing structure, a second InAs layer, and a GaSb layer, wherein the strain-balancing structure comprises a single strain-balancing layer or an arbitrary sequence of strain-balancing layers;

a unipolar electron or hole barrier layer adjacent to the absorber superlattice region, and

a second contact layer adjacent to the unipolar electron or hole barrier layer.

7. The infrared detector device as claimed in claim 6, wherein the GaSb layer comprises a first GaSb layer, a second GaSb layer, and a second strain balancing structure disposed between the first GaSb layer and the second GaSb layer.

8. The infrared detector device as claimed in claim 6, wherein the second strain balancing structure comprises an arbitrary sequence of GaInSb and GaSb layers.

9. The infrared detector device as claimed in claim 6, wherein the strain-balancing structure comprises an arbitrary alloy sequence comprising at least one of a constituent element of aluminum and phosphorus.

10. The infrared detector device as claimed in claim 9, wherein the arbitrary alloy sequence comprises at least one of InGaAs, AlInAs, and InAsP.

11. The infrared detector device as claimed in claim 6, wherein:

the absorber superlattice region is doped p-type; and

one or more layers of the absorber superlattice region comprise aluminum, wherein the aluminum provides for self passivation that prevents formation of an electrical short on sidewalls of the infrared detector device.

12. The infrared detector device as claimed in claim 6, wherein:

the absorber superlattice region is doped p-type; and

the unipolar electron or hole barrier layer is a unipolar hole barrier layer that comprises aluminum, wherein the aluminum provides for self passivation that prevents formation of an electrical short on sidewalls of the infrared detector device.

13. The infrared detector device as claimed in claim 12, wherein one or more layers of the absorber superlattice region comprises aluminum.

14. An infrared detector device comprising:

a first contact layer;

an absorber superlattice region having a period defined by;

an AlInAs layer; and

two or more alternating InAsSb layers of an InAsSb_y1 layer and an InAsSb_y2 layer;

a unipolar electron or hole barrier layer adjacent to the absorber superlattice region, and

a second contact layer adjacent to the unipolar electron or hole barrier layer.

15. The infrared detector device as claimed in claim 14, wherein y₁ is different from y₂.

16. The infrared detector device of claim 14, wherein the period of the absorber superlattice region is further defined by a first InAs layer adjacent to the AlInAs layer and a second InAs layer adjacent to the two or more alternating InAsSb layers.