METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES AND RELATED SEMICONDUCTOR DEVICES AND STRUCTURES
First Claim
1. A method of fanning a semiconductor device structure, the method comprising:
- forming a liner on a conductive material on a base material;
exposing the liner to a radical oxidation treatment to form a densified liner on the conductive material; and
patterning the base material while protecting the conductive material from patterning with the densified liner.
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Accused Products
Abstract
Methods of forming semiconductor devices, memory cells, and arrays of memory cells include forming a liner on a conductive material and exposing the liner to a radical oxidation process to densify the liner. The densified liner may protect the conductive material from substantial degradation or damage during a subsequent patterning process. A semiconductor device structure, according to embodiments of the disclosure, includes features extending from a substrate and spaced by a trench exposing a portion of a substrate. A liner is disposed on sidewalls of a region of at least one conductive material in each feature. A semiconductor device, according to embodiments of the disclosure, includes memory cells, each comprising a control gate region and a capping region with substantially aligning sidewalls and a charge structure under the control region.
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Citations
24 Claims
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1. A method of fanning a semiconductor device structure, the method comprising:
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forming a liner on a conductive material on a base material; exposing the liner to a radical oxidation treatment to form a densified liner on the conductive material; and patterning the base material while protecting the conductive material from patterning with the densified liner. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of forming a memory cell, the method comprising:
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forming a control gate region over a dielectric material; substantially conformally forming a liner on at least sidewalls of the control gate region; exposing the liner to oxygen radicals, hydrogen radicals, and heat to form a densified liner on at least the sidewalls of the control gate region; and selectively removing portions of the dielectric material using the densified liner to protect the sidewalls of the control gate region from exposure. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A method of forming an array of memory cells, the method comprising:
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forming features comprising at least one conductive material on a dielectric material exposed between the features; forming an oxide liner on sidewalls of the features and on the dielectric material; exposing the oxide liner to an in situ steam generation (ISSG) process to form a densified oxide liner on the sidewalls of the features; and removing a portion of the dielectric material and preventing exposure of the at least one conductive material with the densified oxide liner. - View Dependent Claims (15, 16, 17, 18)
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19. A semiconductor device structure, comprising:
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a plurality of features extending from a substrate, neighboring features of the plurality spaced from one another by a trench exposing a portion of the substrate, at least one feature of the plurality comprising; a region of at least one conductive material over the substrate; and a liner on sidewalls of the region of the at least one conductive material. - View Dependent Claims (20, 21)
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22. A semiconductor device, comprising:
a plurality of memory cells, at least one memory cell of the plurality comprising; a control gate region comprising a metallic material; a capping region overlying the control gate region, sidewalls of the control gate region substantially aligning with sidewalls of the capping region; and a charge structure under the control gate region. - View Dependent Claims (23, 24)
Specification