Please download the dossier by clicking on the dossier button x
×

FIELD EFFECT TRANSISTOR WITH FIN STRUCTURE

  • US 20140374841A1
  • Filed: 09/11/2014
  • Published: 12/25/2014
  • Est. Priority Date: 10/31/2011
  • Status: Abandoned Application
First Claim
Patent Images

1. A field effect transistor with a fin structure comprising:

  • a substrate comprising at least one fin structure comprising two source/drain regions and a gate channel region between the two source/drain regions;

    an isolation structure disposed on the substrate and surrounding the fin structure to expose an upper portion of the fin structure, wherein a width of the gate channel region of the exposed upper portion of the fin structure is less than each of widths of the source region and the drain region; and

    a gate structure covering two sidewalls of the gate channel region of the exposed upper portion of the fin structure, wherein two sidewalls of the gate structure contact two facing sidewalls of the two source/drain regions, respectively.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×