PROGRAMMABLE FUSE STRUCTURE AND METHODS OF FORMING

• US 20140374874A1
• Filed: 09/05/2014
• Published: 12/25/2014
• Est. Priority Date: 03/14/2012
• Status: Active Grant

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Li, Yan Zun, Li, Zhengwen, Pei, Chengwen, Yu, Jian
• Granted Patent: US 9,224,687 B2
• Time in Patent Office: Days
• US Class Current: 257/529
• CPC Class Codes: H01L 23/5256 comprising fuses, i.e. connections having their state changed from conductive to non-conductive
• CPC Class Codes: H01L 23/53204 Conductive materials
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10B 69/00 Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Abstract

Methods of forming an electrically programmable fuse (e-fuse) structure and the e-fuse structure are disclosed. One embodiment of an e-fuse structure includes: a silicon structure; a pair of silicide contact regions overlying the silicon structure; and a silicide link overlying the silicon structure and connecting the pair of silicide regions, the silicide link having a depth less than a depth of each of the pair of silicide contact regions.

Claims

1. An electrically programmable fuse (e-fuse) comprising:

a silicon structure;

a pair of silicide contact regions overlying the silicon structure; and

a silicide link overlying the silicon structure and connecting the pair of silicide regions, the silicide link having a depth less than a depth of each of the pair of silicide contact regions.

2. The e-fuse of claim 1, wherein the pair of silicide contact regions include an anode contact and a cathode contact.

3. The e-fuse of claim 2, wherein the anode contact and the cathode contact each include a conductive material.

4. The e-fuse of claim 1, wherein the silicide link further has a width less than a width of the pair of silicide contact regions.

5. The e-fuse of claim 1, wherein the silicide link is thinned on only one side.

6. An electrically programmable fuse (e-fuse) comprising:

a silicon structure;

a pair of silicide contact regions overlying the silicon structure, the pair of silicide contact regions including an anode contact and a cathode contact; and

a silicide link overlying the silicon structure and connecting the pair of silicide regions,

the silicide link having a depth less than a depth of each of the pair of silicide contact regions,

wherein the silicide link further has a width less than a width of the pair of silicide contact regions.

7. The e-fuse of claim 6, wherein the anode contact and the cathode contact each include a conductive material.

8. The e-fuse of claim 6, wherein the silicide link is thinned on only one side.

9. The e-fuse of claim 6, further comprising a pair of dummy poly gates overlying the silicon structure each on opposing sides of the silicide link and separated from the silicide link by the silicon structure.

10. An electrically programmable fuse (e-fuse) comprising:

a silicon structure;

a pair of silicide contact regions overlying the silicon structure, the pair of silicide contact regions including an anode contact and a cathode contact;

a silicide link overlying the silicon structure and connecting the pair of silicide regions,

the silicide link having a depth less than a depth of each of the pair of silicide contact regions,

wherein the silicide link has an equal length as the pair of silicide contact regions; and

a pair of dummy poly gates overlying the silicon structure each on opposing sides of the silicide link and separated from the silicide link by the silicon structure.

11. The e-fuse of claim 10, wherein the anode contact and the cathode contact each include a conductive material.