SEMICONDUCTOR DBR, SEMICONDUCTOR LIGHT-EMITTING DEVICE, SOLID-STATE LASER, PHOTOACOUSTIC APPARATUS, IMAGE-FORMING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DBR
First Claim
1. A semiconductor distributed Bragg reflector (DBR) comprising:
- a first multilayer structure includinga plurality of first semiconductor layers andone or more second semiconductor layers each interposed between a corresponding pair of the plurality of first semiconductor layers;
a second multilayer structure includinga plurality of third semiconductor layers andone or more second semiconductor layers each interposed between a corresponding pair of the plurality of third semiconductor layers; and
a protection layer interposed between the first multilayer structure and the second multilayer structure,wherein,the second semiconductor layer has a lower decomposition temperature than the first semiconductor layer,the third semiconductor layer has a lower decomposition temperature than the second semiconductor layer,the semiconductor DBR has a peak reflectance at a wavelength λ
,the plurality of first semiconductor layers, the one or more second semiconductor layers, and the plurality of third semiconductor layers each have an optical thickness of nλ
/4, where n is an odd number of 1 or more,the protection layer has an optical thickness of mλ
/2, where m is a natural number of 1 or more, anda portion of the protection layer at which the protection layer is brought into contact with the second multilayer structure includes a material having a higher decomposition temperature than the third semiconductor layer.
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Accused Products
Abstract
A semiconductor distributed Bragg reflector (DBR) including a first multilayer structure including a plurality of first semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of first semiconductor layers; a second multilayer structure including a plurality of third semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of third semiconductor layers; and a protection layer interposed between the first multilayer structure and the second multilayer structure. The second semiconductor layer has a lower decomposition temperature than the first semiconductor layer. The third semiconductor layer has a lower decomposition temperature than the second semiconductor layer.
17 Citations
20 Claims
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1. A semiconductor distributed Bragg reflector (DBR) comprising:
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a first multilayer structure including a plurality of first semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of first semiconductor layers; a second multilayer structure including a plurality of third semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of third semiconductor layers; and a protection layer interposed between the first multilayer structure and the second multilayer structure, wherein, the second semiconductor layer has a lower decomposition temperature than the first semiconductor layer, the third semiconductor layer has a lower decomposition temperature than the second semiconductor layer, the semiconductor DBR has a peak reflectance at a wavelength λ
,the plurality of first semiconductor layers, the one or more second semiconductor layers, and the plurality of third semiconductor layers each have an optical thickness of nλ
/4, where n is an odd number of 1 or more,the protection layer has an optical thickness of mλ
/2, where m is a natural number of 1 or more, anda portion of the protection layer at which the protection layer is brought into contact with the second multilayer structure includes a material having a higher decomposition temperature than the third semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for manufacturing a semiconductor DBR having a peak reflectance at a wavelength λ
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a plurality of first semiconductor layers, one or more second semiconductor layers having a lower decomposition temperature than the plurality of first semiconductor layers, and a plurality of third semiconductor layers having a lower decomposition temperature than the one or more second semiconductor layers, the method comprising the steps of; forming a first multilayer structure at a temperature that is equal to or lower than the decomposition temperature of the second semiconductor layer and that is higher than the decomposition temperature of the third semiconductor layer, the first multilayer structure including the plurality of first semiconductor layers, and the one or more second semiconductor layers each interposed between a corresponding pair of the plurality of first semiconductor layers; forming a second multilayer structure at a temperature that is equal to or lower than the decomposition temperature of the third semiconductor layer, the second multilayer structure including the plurality of third semiconductor layers, and the one or more second semiconductor layers each interposed between a corresponding pair of the plurality of third semiconductor layers; and forming a protection layer at a temperature equal to or lower than the decomposition temperature of the third semiconductor layer subsequent to formation of the second multilayer structure and prior to formation of the first multilayer structure, wherein, the plurality of first semiconductor layers, the one or more second semiconductor layers, and the plurality of third semiconductor layers each have an optical thickness of nλ
/4, where n is an odd number of 1 or more,the protection layer has an optical thickness of mλ
/2, where m is a natural number of 1 or more, anda portion of the protection layer at which the protection layer is brought into contact with the second multilayer structure includes a material having a higher decomposition temperature than the third semiconductor layer. - View Dependent Claims (12, 13, 14, 15)
- , the semiconductor DBR including
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16. A semiconductor DBR comprising:
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a first semiconductor layer; a second semiconductor layer having a lower decomposition temperature than the first semiconductor layer; and a third semiconductor layer having a lower decomposition temperature than the second semiconductor layer, wherein, a portion of the semiconductor DBR has a structure in which the third semiconductor layer, the second semiconductor layer, the third semiconductor layer, the second semiconductor layer, the first semiconductor layer, the second semiconductor layer, and the first semiconductor layer are stacked in order, in the structure, the thickness of the second semiconductor layer interposed between the third semiconductor layers is different from the thickness of the second semiconductor layer interposed between the first semiconductor layer and third semiconductor layer, and in the structure, the thickness of the second semiconductor layer interposed between the first semiconductor layers is different from the thickness of the second semiconductor layer interposed between the first semiconductor layer and third semiconductor layer. - View Dependent Claims (17, 18, 19, 20)
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Specification