MICROWAVE PLASMA DEVICE
First Claim
1. A plasma processing system, comprising:
- a power transmission element comprising;
an interior cavity to propagate electromagnetic waves; and
a continuous slit along one side of the power transmission element, the slit forming an opening between the interior cavity and an exterior surface of the power transmission element;
a first power feed opening of the interior cavity to receive the electromagnetic waves;
a first power distribution element disposed within the interior cavity and opposite the power feed opening, the power distribution element comprising a geometry that splits the electromagnetic waves along opposing directions within the interior cavity;
a microwave power source that can provide the electromagnetic waves to the power transmission element;
a dielectric component arranged to cover at least a portion of the slit and to transmit at least a portion of energy from the electromagnetic waves through the opening; and
a plasma processing region adjacent to the power transmission element that can support a semiconductor substrate.
1 Assignment
0 Petitions
Accused Products
Abstract
A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.
18 Citations
24 Claims
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1. A plasma processing system, comprising:
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a power transmission element comprising; an interior cavity to propagate electromagnetic waves; and a continuous slit along one side of the power transmission element, the slit forming an opening between the interior cavity and an exterior surface of the power transmission element; a first power feed opening of the interior cavity to receive the electromagnetic waves; a first power distribution element disposed within the interior cavity and opposite the power feed opening, the power distribution element comprising a geometry that splits the electromagnetic waves along opposing directions within the interior cavity; a microwave power source that can provide the electromagnetic waves to the power transmission element; a dielectric component arranged to cover at least a portion of the slit and to transmit at least a portion of energy from the electromagnetic waves through the opening; and a plasma processing region adjacent to the power transmission element that can support a semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method comprising:
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receiving a semiconductor substrate on a substrate holder in a plasma processing chamber comprising a plasma processing region; providing electromagnetic waves from a microwave power source; receiving the electromagnetic waves at a power transmission element adjacent to the plasma processing region, the power transmission element comprising; an interior cavity to propagate electromagnetic waves; and a continuous slit along one side of the power transmission element, the slit forming an opening between the interior cavity and an exterior surface of the power transmission element; a first power feed opening of the interior cavity to receive the electromagnetic waves; splitting the electromagnetic waves in opposing directions within the power transmission element by using a first power distribution element disposed within the interior cavity and opposite the power feed opening, the power distribution element comprising a geometry that splits the electromagnetic waves along opposing directions within the interior cavity; emitting energy from the continuous slit of the power transmission element towards the plasma processing region; and generating plasma in the plasma processing chamber using the emitted energy and process gas disposed within the plasma processing region. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification