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VERY THIN DIELECTRICS FOR HIGH PERMITTIVITY AND VERY LOW LEAKAGE CAPACITORS AND ENERGY STORING DEVICES

  • US 20150000090A1
  • Filed: 09/19/2014
  • Published: 01/01/2015
  • Est. Priority Date: 10/03/2008
  • Status: Active Grant
First Claim
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1. A method for the creation of an energy storage device that is comprised of a layered dielectric on a substrate, said method comprising:

  • creating a first dielectric film, said first dielectric film comprising a film material from the group consisting of a first insulative film material and a first film material that exhibits a high permittivity;

    creating a second dielectric film in contact with the first dielectric film, said second dielectric film comprising a film material from the group consisting of a second insulative film material and a second film material that exhibits a high permittivity, said first dielectric film and said second dielectric film comprising dielectric film layers;

    arranging the dielectric film layers between an electrically conductive first electrode and an electrically conductive second electrode, said electrically conductive first first electrode being in contact with the dielectric film layers and said electrically conductive first second electrode being opposite the first electrode and in contact with the dielectric film layers;

    enhancing permittivity of the dielectric film layers by performing a permittivity enhancing treatment on at least a portion of the dielectric film layers, said permittivity enhancing treatment comprising a treatment from the group consisting of;

    immersion of a portion of the dielectric film layers to be treated with the permittivity enhancing treatment in an electric field,immersion of the portion of the dielectric film layers to be treated with the permittivity enhancing treatment in a magnetic field, andintroducing a reductant into the portion of the dielectric film layers to be treated with the permittivity enhancing treatment.

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