SEMICONDUCTOR DEVICE INTEGRATING A VOLTAGE DIVIDER AND PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE
First Claim
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1. A semiconductor device comprising:
- a semiconductor substrate;
a high-voltage first resistive structure extending along a spiral path above the substrate and separated from the substrate by a first dielectric layer; and
a conductive shielding structure, comprising a plurality of first shielding strips arranged in sequence along respective portions of the first resistive structure and separated from the first resistive structure by a second dielectric layer.
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Abstract
A semiconductor device includes: a semiconductor substrate; a high-voltage first resistive structure which extends along a spiral path above the substrate and is separated from the substrate by a first dielectric layer; and a conductive shielding structure, including a plurality of first shielding strips, which are arranged in sequence along respective portions of the first resistive structure and are separated from the first resistive structure by a second dielectric layer.
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Citations
18 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate; a high-voltage first resistive structure extending along a spiral path above the substrate and separated from the substrate by a first dielectric layer; and a conductive shielding structure, comprising a plurality of first shielding strips arranged in sequence along respective portions of the first resistive structure and separated from the first resistive structure by a second dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. Process for manufacturing a semiconductor device comprising:
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forming a first dielectric layer on a semiconductor substrate; forming, on the first dielectric layer, a resistive structure extending along a spiral path; forming a second dielectric layer on the first dielectric layer, so as to incorporate the resistive structure; and forming a conductive shielding structure, comprising a plurality of shielding strips arranged in sequence along respective portions of the resistive structure. - View Dependent Claims (16, 17, 18)
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Specification