DIE-TO-DIE INDUCTIVE COMMUNICATION DEVICES AND METHODS

• US 20150001948A1
• Filed: 06/28/2013
• Published: 01/01/2015
• Est. Priority Date: 06/28/2013
• Status: Active Grant

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: Carl E D'Acosta, Darrel R. Frear, Fred T. Brauchler, John M. Pigott, Norman L. Owens, Randall C. Gray, Vivek Gupta
• Inventors: BRAUCHLER, Fred T., PIGOTT, John M., FREAR, Darrel R., GUPTA, Vivek, GRAY, Randall C., OWENS, Norman L., D'ACOSTA, Carl E.
• Granted Patent: US 9,466,413 B2
• Time in Patent Office: Days
• US Class Current: 307/104
• CPC Class Codes: H01F 19/08 Transformers having magnetic bias, e.g. for handling pulses
• CPC Class Codes: H01F 2019/085 Transformer for galvanic isolation
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/16245 the item being metallic
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48464 the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2224/73215 Layer and wire connectors
• CPC Class Codes: H01L 23/49575 Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/14 Integrated circuits

Abstract

Embodiments of inductive communication devices include first and second galvanically isolated IC die and a dielectric structure. Each IC die has a coil proximate to a first surface of the IC die. The IC die are arranged so that the first surfaces of the IC die face each other, and the first coil and the second coil are aligned across a gap between the first and second IC die. The dielectric structure is positioned within the gap directly between the first and second coils, and a plurality of conductive structures are positioned in or on the dielectric structure and electrically coupled with the second IC die. The conductive structures include portions configured to function as bond pads, and the bond pads may be coupled to package leads using wirebonds. During operation, signals are conveyed between the IC die through inductive coupling between the coils.

Claims

1. A device comprising:

a first integrated circuit (IC) die that includes a first coil proximate to a first surface of the first IC die, and a plurality of first bond pads proximate to the first surface of the first IC die, wherein the plurality of first bond pads are electrically coupled to the first coil;

a second IC die that includes a second coil proximate to a first surface of the second IC die, and a plurality of second bond pads proximate to the first surface of the second IC die, wherein the plurality of second bond pads are electrically coupled to the second coil, wherein the first IC die and the second IC die are arranged within the device so that the first surface of the first IC die faces the first surface of the second IC die, and the first coil and the second coil are aligned with each other across a gap between the first IC die and the second IC die, and wherein the first IC die and the second IC die are galvanically isolated from each other;

a dielectric structure within the gap, wherein the dielectric structure has a first surface and an opposing second surface, wherein the first surface of the dielectric structure faces the first surface of the first IC die, the second surface of the dielectric structure faces the first surface of the second IC die, and the dielectric structure includes a portion that extends beyond a lateral extent of the second IC die; and

a plurality of conductive structures on the second surface of the dielectric structure, wherein first ends of the plurality of conductive structures are aligned with and electrically coupled with the second bond pads, and second ends of the plurality of conductive structures are configured to function as a plurality of third bond pads.

2. The device of claim 1, wherein the plurality of conductive structures include a plurality of conductive traces formed on the second surface of the dielectric structure.

3. The device of claim 1, further comprising:

first electrical connections coupled to the first bond pads; and

second electrical connections coupled to the third bond pads, and

wherein the first electrical connections and the second electrical connections are selected from wirebonds, solder bumps, stud bumps, and direct chip attach structures.

4. The device of claim 3, further comprising:

a plurality of package leads, wherein the first electrical connections are coupled between the first bond pads and a first set of the package leads, and the second electrical connections are coupled between the third bond pads and a second set of the package leads.

5. The device of claim 4, further comprising:

a support structure, wherein a second surface of the first IC die is coupled to the support structure, and wherein the support structure and the plurality of package leads form portions of a leadframe.

6. The device of claim 1, wherein:

the first coil is formed from a plurality of first patterned conductors in a plurality of first metal layers that are separated by one or more first dielectric layers; and

the second coil is formed from a plurality of second patterned conductors in a plurality of second metal layers that are separated by one or more second dielectric layers.

7. The device of claim 1, wherein:

the first IC die further includes transmitter circuitry coupled to the first coil; and

the second IC die further includes receiver circuitry coupled to the second coil.

8. The device of claim 1, wherein the dielectric structure includes a dielectric material with a thickness in a range of about 20 micrometers to about 400 micrometers.

9. The device of claim 1, wherein:

the first IC die further includes one or more additional first coils proximate to the first surface of the first IC die;

the second IC die further includes one or more additional second coils proximate to the first surface of the second IC die, wherein each of the additional first coils is aligned with a corresponding one of the additional second coils across the gap; and

the dielectric structure is positioned within the gap directly between aligned pairs of the additional first coils and the additional second coils.

10. The device of claim 1, wherein the first IC die, the second IC die, and the one or more dielectric components are packaged together in an air-cavity package.

11. The device of claim 1, wherein the first IC die, the second IC die, and the one or more dielectric components are packaged together in an overmolded package.

12. An inductive communication method comprising the steps of:

receiving an input signal at a bond pad of a first integrated circuit (IC) die;

converting the input signal to a first signal by transmitter circuitry of the first IC die;

providing the first signal to a first coil of the first IC die, wherein the first coil is proximate to a first surface of the first IC die, and the first coil converts the first signal into a time-varying magnetic field around the first coil;

receiving a second signal by a second coil of a second IC die as a result of the time-varying magnetic field coupling with the second coil, wherein the second coil is proximate to a first surface of the second IC die, and wherein the first IC die and the second IC die are arranged within an integrated circuit package so that the first surface of the first IC die faces the first surface of the second IC die, and the first coil and the second coil are aligned with each other across a gap between the first IC die and the second IC die so that the first IC die and the second IC die are galvanically isolated from each other, wherein a dielectric structure is present in the gap between the first IC die and the second IC die, and the time-varying magnetic field extends across the gap through the dielectric structure;

producing, by receiver circuitry of the second IC die, a reconstructed version of the input signal from the second signal;

providing the reconstructed version of the input signal to a second bond pad of the second IC die; and

conveying the reconstructed version of the input signal from the second bond pad to a third bond pad located on a top surface of the dielectric structure.

13. A method of manufacturing an inductive communication device, the method comprising the steps of:

coupling together a first integrated circuit (IC) die, a dielectric structure, and a second IC die, wherein

the first IC die includes a first coil proximate to a first surface of the first IC die, and a plurality of first bond pads proximate to the first surface of the first IC die, wherein the plurality of first bond pads are electrically coupled to the first coil,

the second IC die includes a second coil proximate to a first surface of the second IC die, and a plurality of second bond pads proximate to the first surface of the second IC die, wherein the plurality of second bond pads are electrically coupled to the second coil,

the first IC die and the second IC die are arranged within the device so that the first surface of the first IC die faces the first surface of the second IC die, and the first coil and the second coil are aligned with each other across a gap between the first IC die and the second IC die,

the first IC die and the second IC die are galvanically isolated from each other,

the dielectric structure is positioned within the gap, and the dielectric structure has a first surface and an opposing second surface, wherein the first surface of the dielectric structure faces the first surface of the first IC die, the second surface of the dielectric structure faces the first surface of the second IC die, and the dielectric structure includes a portion that extends beyond a lateral extent of the second IC die, and

a plurality of conductive structures are positioned on the second surface of the dielectric structure, wherein first ends of the plurality of conductive structures are aligned with and electrically coupled with the second bond pads, and second ends of the plurality of conductive structures are configured to function as a plurality of third bond pads;

electrically connecting the plurality of first bond pads to first package leads; and

electrically connecting the plurality of third bond pads to second package leads.

14. The method of claim 13, further comprising:

forming the first IC die by forming, over the first semiconductor substrate, a plurality of first patterned conductive layers, wherein the first coil is formed from multiple substantially-concentric first conductive rings of the first patterned conductive layers and first conductive vias between the first patterned conductive layers; and

forming the second IC die by forming, over the second semiconductor substrate, a plurality of second patterned conductive layers, wherein the second coil is formed from multiple substantially-concentric second conductive rings of the second patterned conductive layers and second conductive vias between the second patterned conductive layers.

15. The method of claim 14, wherein:

forming the first IC die further comprises forming first communication circuitry between the plurality of first bond pads and the first coil; and

forming the second IC die further comprises forming second communication circuitry between the plurality of second bond pads and the second coil.

16. The method of claim 13, wherein:

the plurality of first bond pads are electrically connected to the first package leads with a first plurality of electrical connections; and

the plurality of third bond pads are electrically connected to the second package leads with a second plurality of electrical connections, and

wherein the first electrical connections and the second electrical connections are selected from wirebonds, solder bumps, stud bumps, and direct chip attach structures.