Plasma Processing Chamber with Dual Axial Gas Injection and Exhaust

• US 20150004793A1
• Filed: 09/19/2014
• Published: 01/01/2015
• Est. Priority Date: 08/04/2010
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Dhindsa, Rajinder, Marakhatnov, Alexei, Bailey, Andrew D. III
• Granted Patent: US 9,793,128 B2
• Time in Patent Office: Days
• US Class Current: 438/710
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: C23C 16/45576 Coaxial inlets for each gas
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32834 Exhausting
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/31 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques encapsulating layers H01L21/56; After treatment of these layers; Selection of materials for these layers

Abstract

An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed above the plasma generation volume and in a substantially parallel orientation to the electrode. The gas distribution unit includes an arrangement of gas supply ports for directing an input flow of a plasma process gas into the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode. The gas distribution unit also includes an arrangement of through-holes that each extend through the gas distribution unit to fluidly connect the plasma generation volume to an exhaust region. Each of the through-holes directs an exhaust flow from the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode.

Claims

1. A method for semiconductor wafer processing, comprising:

holding a semiconductor wafer in a substantially parallel orientation to a gas distribution unit such that a plasma processing volume is formed between the semiconductor wafer and the gas distribution unit;

flowing a plasma processing gas from within the gas distribution unit into the plasma processing volume in a direction substantially perpendicular to the semiconductor wafer; and

directing an exhaust flow of plasma processing gas from within the plasma processing volume through the gas distribution unit in a direction substantially perpendicular to the semiconductor wafer, whereby the exhaust flow of plasma processing gas through the gas distribution unit is the only exhaust flow of plasma processing gas from within the plasma processing volume.

2. The method as recited in claim 1, wherein the gas distribution unit is defined as a plate that extends over an entirety of the plasma processing volume.

3. The method as recited in claim 1, further comprising:

transmitting radiofrequency (RF) power to the plasma processing volume to transform the plasma processing gas into a plasma in exposure to the semiconductor wafer.

4. The method as recited in claim 3, wherein the semiconductor wafer is held on an upper surface of a chuck, and wherein the chuck is operated as an electrode to transmit the RF power to the plasma processing volume.

5. The method as recited in claim 1, wherein flowing the plasma processing gas from within the gas distribution unit into the plasma processing volume and directing the exhaust flow of plasma processing gas from within the plasma processing volume through the gas distribution unit are performed in a pulsed manner to control a residence time of plasma in exposure to the semiconductor wafer.

6. The method as recited in claim 1, wherein the plasma processing gas is flowed from multiple independently controllable gas supply zones within the gas distribution unit into the plasma processing volume.

7. The method as recited in claim 6, further comprising:

controlling a flow rate of plasma processing gas through each of the multiple gas supply zones to control a plasma density across the semiconductor wafer.

8. The method as recited in claim 6, wherein the multiple independently controllable gas supply zones are concentrically defined across the gas distribution unit.

9. The method as recited in claim 1, further comprising:

receiving the exhaust flow of plasma processing gas from the gas distribution unit to an exhaust region;

operating a pump to provide a suction force to a valve fluidly connected to the exhaust region; and

operating the valve to control an exhaust flow from the plasma generation volume through the gas distribution unit.

10. A method for semiconductor wafer processing, comprising:

positioning an outer peripheral structure on a top surface of a chuck so as to form an uninterrupted fluid seal between a bottom surface of the outer peripheral structure and the top surface of the chuck, the outer peripheral structure extending in a solid form from a top surface of the outer peripheral structure to the bottom surface of the outer peripheral structure, the outer peripheral structure surrounding and enclosing a perimeter of a plasma generation volume above the chuck; and

positioning a gas distribution unit above the plasma generation volume so as to extend across the plasma generation volume in a substantially parallel orientation with respect to the chuck, and so as to form an uninterrupted fluid seal between the top surface of the outer peripheral structure and the gas distribution unit around the perimeter of the plasma generation volume, the gas distribution unit separating the plasma generation volume from an exhaust region, the gas distribution unit including an arrangement of gas supply ports configured to direct an input flow of a plasma process gas into the plasma generation volume, the gas distribution unit including an arrangement of through-holes that each extend through the gas distribution unit to fluidly connect the plasma generation volume to the exhaust region.

11. A method for semiconductor wafer processing as recited in claim 10, wherein each gas supply port in the arrangement of gas supply ports is configured to direct the input flow of the plasma process gas into the plasma generation volume in a direction substantially perpendicular to the top surface of the chuck.

12. A method for semiconductor wafer processing as recited in claim 11, wherein each through-hole of the arrangement of through-holes is configured to direct an exhaust flow from the plasma generation volume to the exhaust region in a direction substantially perpendicular to the top surface of the chuck.

13. A method for semiconductor wafer processing as recited in claim 10, further comprising:

transmitting radiofrequency (RF) power to an electrode present within the chuck, whereby the RF power is transmitted from the electrode through the plasma generation volume.

14. A method for semiconductor wafer processing as recited in claim 13, further comprising:

electrically connecting the gas distribution unit to a reference ground potential such that the gas distribution unit provides a ground electrode for the plasma generation volume, the gas distribution unit formed of an electrically conductive material.

15. A method for semiconductor wafer processing as recited in claim 14, further comprising:

flowing the plasma process gas through the gas distribution unit into the plasma generation volume; and

reducing a pressure within the exhaust region so as to draw gases from the plasma generation volume through the arrangement of through-holes within the gas distribution unit into the exhaust region.

16. A method for semiconductor wafer processing as recited in claim 15, further comprising:

controlling a distance extending across the plasma generation volume in a direction perpendicular to the top surface of the chuck.

17. A method for semiconductor wafer processing as recited in claim 15, further comprising:

separating the arrangement of gas supply ports into multiple gas supply regions; and

independently controlling flow of plasma process gas to each of the multiple gas supply regions.

19. A method for semiconductor wafer processing as recited in claim 15, further comprising:

controlling a subset of through-holes of the arrangement of through-holes to be open to the exhaust region and others of the arrangement of through-holes to be closed to the exhaust region.

20. A method for semiconductor wafer processing as recited in claim 19, wherein controlling the subset of through-holes is performed by positioning a flow control plate on an upper surface of the gas distribution unit, the flow control plate configured to expose the subset of through-holes to the exhaust region and cover others of the arrangement of through-holes that are not included in the subset of through-holes.

18. A method for semiconductor wafer processing as recited in claim 18, wherein the multiple gas supply regions includes a center gas supply region and one or more annular gas supply regions defined concentrically about the center gas supply region across the gas distribution unit such that each of the one or more annular gas supply regions circumscribes the center gas supply region.