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LOW-K OXIDE DEPOSITION BY HYDROLYSIS AND CONDENSATION

  • US 20150004806A1
  • Filed: 08/20/2014
  • Published: 01/01/2015
  • Est. Priority Date: 11/01/2006
  • Status: Active Grant
First Claim
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1. A method of depositing a film on a semiconductor substrate, the method comprising:

  • introducing process gases comprising a silicon-containing precursor, an oxidant, and a halogen-free acid catalyst compound to a reaction chamber; and

    exposing the substrate to the process gases under conditions such that a condensed flowable film forms on the substrate,wherein the chemical reactions that form the flowable film comprise a SN1 hydrolysis mechanism and condensation.

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