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METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR SUBSTRATE MANUFACTURED BY THE METHOD

  • US 20150008429A1
  • Filed: 01/16/2013
  • Published: 01/08/2015
  • Est. Priority Date: 01/23/2012
  • Status: Active Grant
First Claim
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1. A method of manufacturing a thin film transistor substrate includingan insulating substrate,an oxide semiconductor layer provided on the insulating substrate and having a channel region,a source electrode and a drain electrode provided on the oxide semiconductor layer to face one another with the channel region interposed therebetween, anda passivation film covering the oxide semiconductor layer, the source electrode, and the drain electrode,the method comprising at least:

  • a semiconductor layer forming step of forming the oxide semiconductor layer on the insulating substrate;

    a source/drain forming step of forming the source electrode and the drain electrode, each of which is a multilayer film of a first conductive film provided on the oxide semiconductor layer and made of titanium or molybdenum, a second conductive film provided on the first conductive film and made of copper, and a third conductive film provided on the second conductive film and made of titanium oxide;

    a passivation film forming step of forming the passivation film which is an inorganic insulating film on the oxide semiconductor layer, the source electrode, and the drain electrode; and

    an annealing step of annealing the oxide semiconductor layer.

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