Semiconductor Component Arrangement Comprising a Trench Transistor
First Claim
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1. A method for producing a semiconductor component arrangement, the method comprising:
- producing a trench transistor structure including at least one trench disposed in the semiconductor body and at least one gate electrode disposed in the at least one trench;
producing a capacitor structure comprising an electrode structure disposed in at least one further trench, the electrode structure comprising at least one electrode; and
wherein the gate electrode and the at least one electrode of the electrode structure are produced by common process steps.
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Abstract
A semiconductor component arrangement method includes producing a trench transistor structure including at least one trench disposed in the semiconductor body and at least one gate electrode disposed in the at least one trench. The method also includes producing a capacitor structure comprising an electrode structure disposed in at least one further trench, the electrode structure comprising at least one electrode. The gate electrode and the at least one electrode of the electrode structure are produced by common process steps.
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Citations
16 Claims
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1. A method for producing a semiconductor component arrangement, the method comprising:
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producing a trench transistor structure including at least one trench disposed in the semiconductor body and at least one gate electrode disposed in the at least one trench; producing a capacitor structure comprising an electrode structure disposed in at least one further trench, the electrode structure comprising at least one electrode; and wherein the gate electrode and the at least one electrode of the electrode structure are produced by common process steps. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor component arrangement, comprising:
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a semiconductor body with a transistor section, and a capacitor section spaced apart from the transistor section; in the transistor section, a trench transistor structure including at least one trench disposed in the semiconductor body and at least one gate electrode disposed in the at least one trench; and in the capacitor section, capacitor structure comprising an electrode structure disposed in at least one further trench, the electrode structure comprising at least one electrode. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A semiconductor component arrangement, comprising:
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a trench transistor structure including at least one trench disposed in the semiconductor body and at least one gate electrode disposed in the at least one trench; a capacitor structure comprising an electrode structure disposed in at least one further trench of the semiconductor body, the electrode structure comprising at least one electrode; and wherein the gate electrode and the at least one electrode of the electrode structure were produced by common process steps. - View Dependent Claims (16)
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Specification