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Semiconductor Device with Vertical Transistor Channels and a Compensation Structure

  • US 20150008517A1
  • Filed: 07/05/2013
  • Published: 01/08/2015
  • Est. Priority Date: 07/05/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • transistor cells having vertical channels perpendicular to a first surface of a semiconductor portion;

    a buried compensation structure between the transistor cells and a second surface of the semiconductor portion parallel to the first surface, the compensation structure comprising first areas and second areas alternatingly arranged along a lateral direction parallel to the first surface; and

    a contiguous impurity layer of a first conductivity type separating the transistor cells and the compensation structure.

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