SELF-POWERED PIEZOELECTRIC ENERGY HARVESTING MICROSYSTEM
First Claim
1. A method of forming a self-powered piezoelectric energy harvesting microsystem, comprising:
- forming integrated circuit elements including transistor gate structures and source/drain regions using CMOS processing steps at a proof mass first portion of a die region of a semiconductor wafer substrate;
depositing and patterning dielectric layers and metal layers at the first portion of the die region to form contacts and interconnections for the integrated circuit elements;
depositing and patterning first electrode, piezoelectric material and second electrode layers at a beam second portion of the die region to form piezoelectric energy harvesting unit components connected to the integrated circuit elements;
etching fully through the substrate to form a support frame third portion of the die region separated by a gap from a majority of the first portion and joining by the second portion to a minority of the first portion;
etching partially through the substrate to thin the second portion; and
providing a battery connected to the integrated circuit elements at the first portion of the die region.
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Accused Products
Abstract
A self-powered piezoelectric energy harvesting microsystem device has CMOS integrated circuit elements, contacts and interconnections formed at a proof mass portion of a die region of a semiconductor wafer. Piezoelectric energy harvesting unit components connected to the integrated circuit elements are formed at a thinned beam portion of the die region that connects the proof mass portion for vibration relative to a surrounding anchor frame portion. A battery provided on the proof mass portion connects to the integrated circuit elements. In a cantilever architectural example, the battery is advantageously located at a distal end of the proof mass portion, opposite the joinder with frame portion via the beam portion.
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Citations
9 Claims
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1. A method of forming a self-powered piezoelectric energy harvesting microsystem, comprising:
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forming integrated circuit elements including transistor gate structures and source/drain regions using CMOS processing steps at a proof mass first portion of a die region of a semiconductor wafer substrate; depositing and patterning dielectric layers and metal layers at the first portion of the die region to form contacts and interconnections for the integrated circuit elements; depositing and patterning first electrode, piezoelectric material and second electrode layers at a beam second portion of the die region to form piezoelectric energy harvesting unit components connected to the integrated circuit elements; etching fully through the substrate to form a support frame third portion of the die region separated by a gap from a majority of the first portion and joining by the second portion to a minority of the first portion; etching partially through the substrate to thin the second portion; and providing a battery connected to the integrated circuit elements at the first portion of the die region. - View Dependent Claims (2, 3, 4)
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5. A self-powered piezoelectric energy harvesting microsystem device, comprising:
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integrated circuit elements, including transistor gate structures and source/drain regions formed using CMOS processing steps, located at a proof mass portion of a die region of a semiconductor wafer substrate; contacts and interconnections for the integrated circuit elements formed by dielectric layers and metal layers over the proof mass portion of the die region; piezoelectric energy harvesting unit components connected to the integrated circuit elements formed by first electrode, piezoelectric material and second electrode layers at a beam portion of the die region; and a battery provided on the proof mass portion connected to the integrated circuit elements; wherein the die region includes a support frame portion separated by a gap from a majority of the proof mass portion;
the beam portion has a thickness less than the proof mass and support frame portions and joins a minority of the proof mass portion to the support frame portion. - View Dependent Claims (6, 7, 8, 9)
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Specification