SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a first wiring;
a second wiring;
a third wiring electrically connecting the first wiring and the second wiring; and
a transistor comprising;
a semiconductor film including a channel formation region; and
a source electrode and a drain electrode electrically connected to the semiconductor film,wherein the second wiring, the source electrode and the drain electrode are provided on a same surface,wherein each end portion of the second wiring, the source electrode and the drain electrode comprises an upper end portion and a lower end portion, andwherein a distance between the upper end portion and the lower end portion of the second wiring is longer than a distance between the upper end portion and the lower end portion of each of the source electrode and the drain electrode.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device including a transistor and a connection portion is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film and at a position overlapping with the gate electrode, and source and drain electrodes electrically connected to the oxide semiconductor film; and the connection portion includes a first wiring on the same surface as a surface on which the gate electrode is formed, a second wiring on the same surface as a surface on which the source and drain electrodes are formed, and a third wiring connecting the first wiring and the second wiring. The distance between an upper end portion and a lower end portion of the second wiring is longer than the distance between an upper end portion and a lower end portion of each of the source and drain electrodes.
150 Citations
20 Claims
-
1. A semiconductor device comprising:
-
a first wiring; a second wiring; a third wiring electrically connecting the first wiring and the second wiring; and a transistor comprising; a semiconductor film including a channel formation region; and a source electrode and a drain electrode electrically connected to the semiconductor film, wherein the second wiring, the source electrode and the drain electrode are provided on a same surface, wherein each end portion of the second wiring, the source electrode and the drain electrode comprises an upper end portion and a lower end portion, and wherein a distance between the upper end portion and the lower end portion of the second wiring is longer than a distance between the upper end portion and the lower end portion of each of the source electrode and the drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A semiconductor device comprising:
-
a first wiring; a second wiring; a third wiring electrically connecting the first wiring and the second wiring; and a transistor comprising; a semiconductor film including a channel formation region; a gate electrode overlapping with the semiconductor film with a first insulating film provided therebetween; and a source electrode and a drain electrode electrically connected to the semiconductor film, a second insulating film over the transistor and the second wiring; and a pixel electrode over the second insulating film and electrically connected to the source electrode or the drain electrode, wherein the second wiring, the source electrode and the drain electrode are provided on a same surface, wherein each end portion of the second wiring, the source electrode and the drain electrode comprises an upper end portion and a lower end portion, and wherein a distance between the upper end portion and the lower end portion of the second wiring is longer than a distance between the upper end portion and the lower end portion of each of the source electrode and the drain electrode. - View Dependent Claims (9, 10, 11, 12, 13, 14)
-
-
15. A semiconductor device comprising:
-
a first wiring; a second wiring; a third wiring electrically connecting the first wiring and the second wiring; and a transistor comprising; a gate electrode; a first insulating film over the gate electrode and the first wiring; a semiconductor film including a channel formation region over the first insulating film; and a source electrode and a drain electrode over and electrically connected to the semiconductor film; a second insulating film over the transistor and the second wiring; and a pixel electrode over the second insulating film and electrically connected to the source electrode or the drain electrode, wherein the first wiring and the gate electrode are provided on a same surface, wherein the second wiring, the source electrode and the drain electrode are provided on a same surface, wherein the third wiring is in contact with the first wiring through a first opening in the first insulating film, wherein the third wiring is in contact with the second wiring through a second opening in the second insulating film, wherein each end portion of the second wiring, the source electrode and the drain electrode comprises an upper end portion and a lower end portion, and wherein a distance between the upper end portion and the lower end portion of the second wiring is longer than a distance between the upper end portion and the lower end portion of each of the source electrode and the drain electrode. - View Dependent Claims (16, 17, 18, 19, 20)
-
Specification