LIGHT EMITTING DIODE PACKAGE STRUCTURE

• US 20150014720A1
• Filed: 04/15/2014
• Published: 01/15/2015
• Est. Priority Date: 07/10/2013
• Status: Abandoned Application

• Current Assignee: Lextar Electronics Corporation
• Original Assignee: Lextar Electronics Corporation
• Inventors: Tien, Yun-Yi
• Application Number:
  US14/252,848
• Publication Number:
  US 20150014720A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/1403 Bump connectors having different sizes, e.g. different diameters, heights or widths
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/92125 the second connecting process involving a layer connector
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin

Abstract

A LED package structure including a carrier and a light emitting diode (LED) chip is provided. The LED chip includes a substrate, a patterned structure, a first semiconductor layer, an active layer and a second semiconductor layer. The substrate has a first surface and a second surface opposite to the first surface. The patterned structure is formed on the second surface of the substrate. The first semiconductor layer is disposed on the first surface of the substrate. The active layer is disposed on a portion of a surface of the first semiconductor layer, and other portion of the surface not covered by the active layer is exposed. The second semiconductor layer is disposed on the active layer. The LED chip is disposed on the carrier by way of flip-chip so that the first and the second semiconductor layers face towards the carrier.

Claims

1. A light emitting diode (LED) package structure, comprising:

a carrier; and

a light emitting diode (LED) chip, comprising;

a substrate having a first surface and a second surface opposite to the first surface;

a patterned structure formed on the second surface of the substrate;

a first semiconductor layer disposed on the first surface of the substrate;

an active layer disposed on a portion of the surface of the first semiconductor layer, and other portion of the first semiconductor layer not covered by the active layer is exposed; and

a second semiconductor layer disposed on the active layer;

wherein, the LED chip is disposed on the carrier by way of flip-chip with the first and the second semiconductor layers facing towards the carrier.

2. The LED light emitting structure according to claim 1, wherein the patterned structure has a non-flat surface whose cross-section is one of cone, cylinder, semi-circle, trapezoid or a combination thereof.

3. The LED package structure according to claim 2, wherein the carrier further comprises a first electrode and a second electrode disposed thereon.

4. The LED package structure according to claim 3, wherein the LED chip further comprises:

a third electrode disposed on the exposed portion of the first semiconductor layer; and

a fourth electrode disposed on the second semiconductor layer;

wherein, the first electrode is electrically connected to the third electrode, and the second electrode is electrically connected to the fourth electrode.

5. The LED package structure according to claim 4, further comprising:

a first conductor electrically connecting the first electrode and the third electrode; and

a second conductor electrically connecting the second electrode and the fourth electrode.

6. The LED package structure according to claim 5, further comprising an underfill for encapsulating the first conductor, the second conductor and a portion of a lateral surface of the LED chip.

7. The LED package structure according to claim 6, wherein the underfill comprises a first wavelength conversion material capable of emitting a second light of wavelength λ

2 after having been irradiated by a first light of wavelength λ

1 emitted by the active layer, and λ

2>

λ

1.

8. The LED package structure according to claim 7, wherein the underfill further comprises a composition of reflective particles for reflecting the first light.

9. The LED package structure according to claim 8, further comprising a wavelength conversion layer disposed on the patterned structure, the wavelength conversion layer comprises a first wavelength conversion material and/or a second wavelength conversion material, such that after the wavelength conversion layer is irradiated by the first light of wavelength λ

1 emitted by the active layer, the wavelength conversion layer is capable of emitting the second light of wavelength λ

2 and/or the third light of wavelength λ

3, and λ

2>

λ

1, λ

3>

λ

1.

10. The LED package structure according to claim 9, further comprising an encapsulant encapsulating the wavelength conversion layer and the LED chip.

11. The LED package structure according to claim 10, further comprising a barrier structure disposed on the carrier and surrounding the wavelength conversion layer and the LED chip for forming a recess into which the encapsulant is interposed.

12. The LED package structure according to claim 11, wherein the encapsulant further comprises the first wavelength conversion material and/or the second wavelength conversion material.

13. The LED package structure according to claim 1, wherein the substrate is a sapphire substrate or a SiC substrate.

14. The LED package structure according to claim 1, wherein the LED chip is an LED chip of blue light or ultra-violet light.

15. The LED package structure according to claim 1, further comprising a wavelength conversion layer disposed on the patterned structure, the wavelength conversion layer comprises a first wavelength conversion material and/or a second wavelength conversion material, such that after the wavelength conversion layer is irradiated by the first light of wavelength λ

1 emitted by the active layer, the wavelength conversion layer is capable of emitting the second light of wavelength λ

2 and/or the third light of wavelength λ

3, and λ

2>

λ

1, λ

3>

λ

1.