Please download the dossier by clicking on the dossier button x
×

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

  • US 20150014780A1
  • Filed: 01/28/2014
  • Published: 01/15/2015
  • Est. Priority Date: 07/15/2013
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • a substrate including a first active region, a second active region and a field region between and directly contacting the first and second active regions; and

    a gate structure formed on the substrate to cross the first active region, the second active region and the field region,wherein the gate structure includes a p-type metal gate electrode and an n-type metal gate electrode directly contacting each other,wherein the p-type metal gate electrode is formed on the first active region and the n-type metal gate electrode is formed on the second active region, andwherein the contact surface between the p-type metal gate electrode and the n-type metal gate electrode is closer to the first active region than to the second active region.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×