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ELECTRONIC DEVICE USING GROUP III NITRIDE SEMICONDUCTOR AND ITS FABRICATION METHOD AND AN EPITAXIAL MULTI-LAYER WAFER FOR MAKING IT

  • US 20150014817A1
  • Filed: 07/11/2014
  • Published: 01/15/2015
  • Est. Priority Date: 04/07/2006
  • Status: Active Grant
First Claim
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1. An epitaxial multi-layer wafer for fabricating electronic devices comprising (i) a group III nitride substrate of Ga1-x1-y1Alx1Iny1N (0≦

  • x1≦

    1, 0≦

    y1≦

    1) having a first side and a second side opposite to the first side and (ii) an active layer of Ga1-x2-y2Alx2Iny2N (0≦

    x2≦

    1, 0≦

    y2≦

    1) on the first side of the group III nitride substrate, wherein;

    (a) a dislocation density of the group III nitride substrate is less than about 105 cm

    2
    ;

    (b) the group III nitride substrate is selected from the group consisting of (i) a group III nitride substrate having an electron concentration higher than about 1018 cm

    3
    and (ii) a group III nitride substrate having an oxygen concentration higher than about 1018 cm

    3
    ;

    (c) the group III nitride substrate is fabricated from a bulk crystal of Ga1-x1-y1Alx1Iny1N (0≦

    x1≦

    1, 0≦

    y1≦

    1) grown in supercritical ammonia;

    (d) the active layer is an epitaxially deposited layer selected from the group consisting of (i) an active layer having an electron concentration lower than about 1018 cm

    3
    and (ii) an active layer having an oxygen concentration lower than about 1018 cm

    3
    ;

    (e) the active layer has a thickness sufficiently large that a depletion region which is formed in the active layer after fabricating the electronic device with a first electrode on the first side of the wafer and a second electrode on the second side of the wafer is outside of the substrate.

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