MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTILAYER REFLECTION FILM, TRANSMISSIVE MASK BLANK, REFLECTIVE MASK, AND SEMICONDUCTOR DEVICE FABRICATION METHOD

• US 20150017574A1
• Filed: 03/28/2013
• Published: 01/15/2015
• Est. Priority Date: 03/28/2012
• Status: Active Grant

• Current Assignee: Hoya Corporation
• Original Assignee: Hoya Corporation
• Inventors: Orihara, Toshihiko, Hamamoto, Kazuhiro, Kozakai, Hirofumi, Usui, Youichi, Shoki, Tsutomu, Horikawa, Junichi
• Granted Patent: US 9,494,851 B2
• Time in Patent Office: Days
• US Class Current: 430/5
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C03C 17/3435 comprising a nitride, oxynitride, boronitride or carbonitride
• CPC Class Codes: C03C 17/3626 one layer at least containing a nitride, oxynitride, boronitride or carbonitride
• CPC Class Codes: C03C 17/3636 one layer at least containing silicon, hydrogenated silicon or a silicide
• CPC Class Codes: C03C 17/3639 Multilayers containing at least two functional metal layers
• CPC Class Codes: C03C 17/3649 made of metals other than silver
• CPC Class Codes: C03C 17/3665 specially adapted for use as photomask
• CPC Class Codes: C03C 2201/42 containing titanium
• CPC Class Codes: C03C 2218/33 by etching
• CPC Class Codes: C03C 23/0075 Cleaning of glass specially adapted to plate glass B08B11/00
• CPC Class Codes: C03C 3/06 with more than 90% silica by weight, e.g. quartz C03C3/045 takes precedence
• CPC Class Codes: G02B 5/08 Mirrors vehicle mirrors involving special optical features B60R1/08
• CPC Class Codes: G02B 5/0816 Multilayer mirrors, i.e. having two or more reflecting layers G02B5/0883, G02B5/0891 take precedence
• CPC Class Codes: G02B 5/0891 Ultraviolet [UV] mirrors apparatus for microlithography exposure G03F7/70; X-ray multilayer structures G21K1/06
• CPC Class Codes: G03F 1/22 Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
• CPC Class Codes: G03F 1/48 Protective coatings
• CPC Class Codes: G03F 7/16 Coating processes; Apparatus therefor applying coatings to base materials in general B05; applying photosensitive compositions to base for photographic purposes G03C1/74
• CPC Class Codes: G03F 7/2002 with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
• CPC Class Codes: G03F 7/2004 characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
• CPC Class Codes: G03F 7/70733 : Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
• CPC Class Codes: H01L 21/3081 : characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/3085 : characterised by their behaviour during the process, e.g. soluble masks, redeposited masks

Abstract

Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm⁴ at a spatial frequency of not less than 1 μm⁻¹.

Claims

1. A mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μ

m×

1 μ

m with an atomic force microscope, and has a power spectrum density of not more than 10 nm⁴ at a spatial frequency of not less than 1 μ

m<sup>−

1</sup>.

2. The mask blank substrate according to claim 1, wherein the main surface has a power spectrum density of not more than 10 nm⁴, obtained by measuring an area of 1 μ

m×

1 μ

m with an atomic force microscope, at a spatial frequency of not less than 1 μ

m<sup>−

1</sup> and not more than 10 μ

m<sup>−

1</sup>.

3. The mask blank substrate according to claim 2, wherein the main surface has a power spectrum density of not less than 1 nm⁴ and not more than 10 nm⁴, obtained by measuring an area of 1 μ

m×

1 μ

m with an atomic force microscope, at a spatial frequency of not less than 1 μ

m<sup>−

1</sup> and not more than 10 μ

m<sup>−

1</sup>.

4. The mask blank substrate according to claim 1, wherein the main surface is subjected to a surface treatment with catalyst-referred etching.

5. The mask blank substrate according to claim 1, wherein the mask blank substrate is used in EUV lithography.

6. The mask blank substrate according to claim 5, wherein a thin film of a material comprising a metal, an alloy, or at least one of oxygen, nitrogen and carbon contained in one of the metal and the alloy, is formed on the main surface of a substrate of multi-component glass.

7. A substrate with a multilayer reflective film comprising a multilayer reflective film having a high refractive index layer and a low refractive index layer alternately laminated on the surface of the mask blank substrate according to claim 1.

8. The substrate with a multilayer reflective film according to claim 7, wherein the substrate has a protective film on the multilayer reflective film.

9. The substrate with a multilayer reflective film according to claim 7, wherein the surface of the multilayer reflective film or the protective film of the substrate with a multilayer reflective film has a power spectrum density of not more than 20 nm⁴, obtained by measuring an area of 1 μ

m×

1 μ

m with an atomic force microscope, at a spatial frequency of not less than 1 μ

m<sup>−

1</sup>.

10. The substrate with a multilayer reflective film according to claim 9, wherein the surface of the multilayer reflective film has a power spectrum density of not more than 20 nm⁴, obtained by measuring an area of 1 μ

m×

1 μ

m with an atomic force microscope, at a spatial frequency of not less than 1 μ

m<sup>−

1</sup> and not more than 10 μ

m<sup>−

1</sup>.

11. The substrate with a multilayer reflective film according to claim 9, wherein the surface of the multilayer reflective film has a power spectrum density of not more than 9 nm⁴, obtained by measuring an area of 1 μ

m×

1 μ

m with an atomic force microscope, at a spatial frequency of not less than 10 μ

m<sup>−

1</sup> and not more than 100 μ

m<sup>−

1</sup>.

12. The substrate with a multilayer reflective film according to claim 9, wherein the surface of the multilayer reflective film has a root mean square roughness (Rms) of not more than 0.15 nm, obtained by measuring an area of 1 μ

m×

1 μ

m with an atomic force microscope.

17. A transmissive mask blank comprising a light shielding function film to be a transfer pattern on the main surface of the mask blank substrate according to claim 1.

18. A reflective mask blank comprising an absorber film to be a transfer pattern on the multilayer reflective film of the substrate with a multilayer reflective film according to claim 7.

19. A transmissive mask comprising a light shielding function film pattern provided on the main surface by patterning the light shielding function film of the transmissive mask blank according to claim 17.

20. A reflective mask comprising:

an absorber pattern provided on the multilayer reflective film by patterning the absorber film of the reflective mask blank according to claim 18.

21. A method of manufacturing a semiconductor device, comprising a step of forming a transfer pattern on a transferred substrate by performing a lithography process using an exposure device with the transmissive mask according to claim 19.

22. A method of manufacturing a semiconductor device, comprising a step of forming a transfer pattern on a transferred substrate by performing a lithography process using an exposure device with the reflective mask according to claim 20.

23. The substrate with a multilayer reflective film according to claim 8, wherein the surface of the protective film has a power spectrum density of not more than 20 nm⁴, obtained by measuring an area of 1 μ

m×

1 μ

m with an atomic force microscope, at a spatial frequency of not less than 1 μ

m<sup>−

1</sup>.

24. The substrate with a multilayer reflective film according to claim 23, wherein the surface of the protective film has a power spectrum density of not more than 20 nm⁴, obtained by measuring an area of 1 μ

m×

1 μ

m with an atomic force microscope, at a spatial frequency of not less than 1 μ

m<sup>−

1</sup> and not more than 10 μ

m<sup>−

1</sup>.

25. The substrate with a multilayer reflective film according to claim 23, wherein the surface of the protective film has a power spectrum density of not more than 9 nm⁴, obtained by measuring an area of 1 μ

m×

1 μ

m with an atomic force microscope, at a spatial frequency of not less than 10 μ

m<sup>−

1</sup> and not more than 100 μ

m<sup>−

1</sup>.

26. The substrate with a multilayer reflective film according to claim 23, wherein the surface of the protective film has a root mean square roughness (Rms) of not more than 0.15 nm, obtained by measuring an area of 1 μ

m×

1 μ

m with an atomic force microscope.

29. A reflective mask blank comprising an absorber film to be a transfer pattern on the protective film of the substrate with a multilayer reflective film according to claim 8.

30. A reflective mask comprising:

an absorber pattern provided on the protective film by patterning the absorber film of the reflective mask blank according to claim 29.

13. A substrate with a multilayer reflective film comprising a multilayer reflective film having a high refractive index layer and a low refractive index layer alternately laminated on a main surface of a mask blank substrate for use in lithography,

wherein a surface of the multilayer-reflective-film formed substrate has a root mean square roughness (Rms) of not more than 0.15 nm, obtained by measuring an area of 1 μ

m×

1 μ

m with an atomic force microscope, and has a power spectrum density of not more than 20 nm⁴ at a spatial frequency of not less than 1 μ

m<sup>−

1</sup>.

14. The substrate with a multilayer reflective film according to claim 13, wherein the substrate with a multilayer reflective film has a protective film on the multilayer reflective film.

15. The substrate with a multilayer reflective film according to claim 13, wherein the surface of the multilayer reflective film has a power spectrum density of not more than 20 nm⁴, obtained by measuring an area of 1 μ

m×

1 μ

m with an atomic force microscope, at a spatial frequency of not less than 1 μ

m<sup>−

1</sup> and not more than 10 μ

m<sup>−

1</sup>.

16. The substrate with a multilayer reflective film according to claim 13, wherein the surface of the multilayer reflective film has a power spectrum density of not more than 9 nm⁴, obtained by measuring an area of 1 μ

m×

1 μ

m with an atomic force microscope, at a spatial frequency of not less than 10 μ

m<sup>−

1</sup> and not more than 100 μ

m<sup>−

1</sup>.

27. The substrate with a multilayer reflective film according to claim 14, wherein the surface of the protective film has a power spectrum density of not more than 20 nm⁴, obtained by measuring an area of 1 μ

m×

1 μ

m with an atomic force microscope, at a spatial frequency of not less than 1 μ

m<sup>−

1</sup> and not more than 10 μ

m<sup>−

1</sup>.

28. The substrate with a multilayer reflective film according to claim 14, wherein the surface of the protective film has a power spectrum density of not more than 9 nm⁴, obtained by measuring an area of 1 μ

m×

1 μ

m with an atomic force microscope, at a spatial frequency of not less than 10 μ

m<sup>−

1</sup> and not more than 100 μ

m<sup>−

1</sup>.