×

MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTILAYER REFLECTION FILM, TRANSMISSIVE MASK BLANK, REFLECTIVE MASK, AND SEMICONDUCTOR DEVICE FABRICATION METHOD

  • US 20150017574A1
  • Filed: 03/28/2013
  • Published: 01/15/2015
  • Est. Priority Date: 03/28/2012
  • Status: Active Grant
First Claim
Patent Images

1. A mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μ



  • 1 μ

    m with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μ

    m

    1
    .

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×