SEMICONDUCTOR MODULE

• US 20150019150A1
• Filed: 09/30/2014
• Published: 01/15/2015
• Est. Priority Date: 03/28/2011
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: HIROHATA, Kenji, MUKAI, Minoru, MONDA, Tomoko
• Granted Patent: US 9,772,359 B2
• Time in Patent Office: Days
• US Class Current: 702/65
• CPC Class Codes: G01R 27/16 Measuring impedance of element or network through which a current is passing from another source, e.g. cable, power line
• CPC Class Codes: H01L 23/64 Impedance arrangements
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

According to one embodiment, a semiconductor module comprises a substrate, a first wiring, an electrode pad, a junction, an oscillator, and a detector. The first wiring is disposed on the substrate, and has a characteristic impedance Z0. The electrode pad is connected to the first wiring. The junction is disposed on the electrode pad, and has an impedance Z1. The oscillator is disposed in contact with the first wiring, and oscillates a pulse wave of a voltage toward the junction via the first wiring. The detector is disposed in contact with the first wiring, and detects an output wave of the pulse wave from the junction. The characteristic impedance Z0 and the impedance Z1 satisfy a following relationship (1),

$\begin{array}{cc}\frac{Z0-Z1}{Z0}\le 0.05.& \left(1\right)\end{array}$

Claims

1-9. -9. (canceled)

10. A semiconductor module comprising:

a substrate;

a first wiring disposed on the substrate;

an electrode pad connected to the first wiring;

a junction disposed on the electrode pad;

an oscillator that oscillates a predetermined voltage signal, connected to the first wiring;

a detector that detects the predetermined voltage signal, connected to the first wiring; and

an analysis unit that decides a degradation status of the junction, based on an oscillation voltage signal of the first wiring oscillated by the oscillator and a voltage value of a detection voltage signal detected by the detector via the first wiring.

11. The semiconductor module according to claim 10, wherein

the analysis unit:

includes a storage that stores a table corresponding the degradation status of the junction with the voltage value of the detection voltage signal, and

decides the degradation status of the junction, based on the table.

12. The semiconductor module according to claim 11, wherein the oscillation voltage signal is a pulse wave signal,

the degradation status in the table is segmented in correspondence with each degree of the degradation status,

the voltage value of the detection voltage signal and a predetermined count value of the voltage value of the detection voltage signal are stored in correspondence with each degree of the degradation status in the table,

the analysis unit makes the oscillator occur the oscillation voltage signal during a predetermined pulse occurrence time, and, when the voltage value of the detection voltage signal during the predetermined pulse occurrence time is larger than or equal to the predetermined count value corresponding to a degree of the degradation status in the table, decides that the degradation status of the junction is the degree of the degradation status.

13. The semiconductor module according to claim 12, wherein

the predetermined count value in the table is a smaller value if the voltage value of the detection voltage signal is a larger value.

14. An electronic device on which the semiconductor module of claim 10 is loaded.

15. An electronic device on which the semiconductor module of claim 11 is loaded.

16. An electronic device on which the semiconductor module of claim 12 is loaded.

17. An electronic device on which the semiconductor module of claim 13 is loaded.

18. A method for deciding a degradation status of a junction in a semiconductor,

the semiconductor including

a substrate,

a first wiring disposed on the substrate,

an electrode pad connected to the first wiring,

the junction disposed on the electrode pad,

an oscillator that oscillates a predetermined voltage signal, connected to the first wiring, and

a detector that detects the predetermined voltage signal, connected to the first wiring,

the method comprising:

deciding the degradation status of the junction, based on an oscillation voltage signal of the first wiring oscillated by the oscillator and a voltage value of a detection voltage signal detected by the detector via the first wiring.

19. The method according to claim 18, further comprising:

storing a table corresponding the degradation status of the junction with the voltage value of the detection voltage signal;

wherein the deciding includes

deciding the degradation status of the junction, based on the table.

20. The method according to claim 19, wherein

the oscillation voltage signal is a pulse wave signal,

the degradation status in the table is segmented in correspondence with each degree of the degradation status,

the voltage value of the detection voltage signal and a predetermined count value of the voltage value of the detection voltage signal are stored in correspondence with each degree of the degradation status in the table,

the deciding includes

making the oscillator occur the oscillation voltage signal during a predetermined pulse occurrence time;

and

when the voltage value of the detection voltage signal during the predetermined pulse occurrence time is larger than or equal to the predetermined count value corresponding to a degree of the degradation status in the table, deciding that the degradation status of the junction is the degree of the degradation status.

21. The method according to claim 20, wherein

the predetermined count value in the table is a smaller value if the voltage value of the detection voltage signal is a larger value.

22. An electronic device on which the semiconductor of claim 18 is loaded.

23. An electronic device on which the semiconductor of claim 19 is loaded.

24. An electronic device on which the semiconductor of claim 20 is loaded.

25. An electronic device on which the semiconductor of claim 21 is loaded.