BAFFLE AND APPARATUS FOR TREATING SURFACE OF BAFFLE, AND SUBSTRATE TREATING APPARATUS

• US 20150020974A1
• Filed: 07/19/2013
• Published: 01/22/2015
• Est. Priority Date: 07/19/2013
• Status: Abandoned Application

• Current Assignee: PSK Inc.
• Original Assignee: PSK Inc.
• Inventors: JI, YoungYeon
• Application Number:
  US13/946,162
• Publication Number:
  US 20150020974A1
• Time in Patent Office: Days
• US Class Current: 156/345.33
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32633 Baffles
• CPC Class Codes: H01J 37/32853 Hygiene
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts

Abstract

The present invention relates to a substrate treating apparatus, and more particularly, to an apparatus treating a substrate using plasma. In an embodiment, a baffle is formed with holes distributing a process gas excited to a plasma state, and has a surface which is treated with a surface treating material comprising a silicon compound.

Claims

1. A baffle which is formed with holes designed for distributing a process gas excited to a plasma state, the baffle having a surface which is treated with a surface treating material comprising a silicon compound.

2. The baffle of claim 1, wherein the baffle comprises:

a base formed with the holes; and

a coupling part protruding upward from an upper edge region of the base and having a ring shape,

wherein the surface treating material treats a bottom surface of the base.

3. The baffle of claim 1, wherein the surface of the baffle which is treated has a polar state.

4. The baffle of claim 1, wherein the surface of the baffle which is treated has a non-polar state.

5. The baffle of claim 1, wherein the silicon compound comprises a silane-based compound.

6. The baffle of claim 5, wherein the silicon compound comprises hexamethyldisiloxane (HMDSO).

7. The baffle of claim 1, wherein the surface-treated baffle has a surface which is coated with silicon dioxide (SiO₂).

8. A substrate treating apparatus comprising:

a process chamber having a space formed therein;

a susceptor positioned inside the process chamber to support a substrate; and

a process gas supply part supplying a process gas in a plasma state to the inside of the process chamber,

wherein an inner side surface of the process chamber is treated with a surface treating material comprising a silicon compound.

9. The substrate treating apparatus of claim 8, wherein the inner side surface of the process chamber which is treated has a polar state.

10. The substrate treating apparatus of claim 8, wherein the inner side surface of the process chamber which is treated has a non-polar state.

11. The substrate treating apparatus of claim 8, wherein the inner side surface of the process chamber which is treated is coated with silicon dioxide (SiO₂).

12. The substrate treating apparatus of claim 8, further comprising a baffle positioned above the susceptor and formed with holes distributing the process gas provided to the substrate,

wherein the baffle has a surface which is treated with a surface treating material.

13. The substrate treating apparatus of claim 12, wherein the surface of the baffle which is treated is a bottom surface facing the substrate.

14. The substrate treating apparatus of claim 13, wherein the bottom surface of the baffle which is treated has a polar state.

15. The substrate treating apparatus of claim 13, wherein the bottom surface of the baffle which is treated has a non-polar state.

16. The substrate treating apparatus of claim 13, wherein the bottom surface of the baffle which is treated is coated with silicon dioxide (SiO₂).

21. The baffle surface treating apparatus of claim 13, wherein the silicon compound comprises a silane-based compound.

17. A baffle surface treating apparatus comprising:

a surface treating chamber having a space formed therein;

a support plate which is positioned inside the surface treating chamber and provided as a lower electrode, and on which a baffle is placed;

an upper electrode which is disposed above the support plate to face the support plate and forms an electric field in a space between the support plate and the upper electrode; and

a surface treating gas supply unit supplying a surface treating gas including a silicon compound to a space between the support plate and the upper electrode,

wherein the surface treating gas is excited to a plasma state by the electric field and treats a surface of the baffle

18. The baffle surface treating apparatus of claim 17, wherein the baffle comprises:

a base formed with holes; and

a coupling part protruding upward from an upper edge region of the base and having a ring shape,

wherein the baffle is placed on the support plate such that the bottom surface of the base faces the upper electrode.

19. The baffle surface treating apparatus of claim 17, wherein the surface treating gas supply part comprises:

a container storing the surface treating material including the silicon compound;

an inert gas supply part injecting an inert gas to the container to pressurize the inside of the container; and

a gas supply line connecting the surface treating chamber and the container and supplying the surface treating gas generated in the inside of the container to the inside of the surface treating chamber.

20. The baffle surface treating apparatus of claim 17, wherein the surface treating gas supply part comprises:

a container storing a surface treating material including the silicon compound;

a heater heating the inside of the container; and

a gas supply line connecting the surface treating chamber and the container and supplying the surface treating gas generated in the inside of the container to the inside of the surface treating chamber.