METHOD FOR PATTERNING A MAGNETIC TUNNEL JUNCTION STACK

• US 20150021726A1
• Filed: 07/16/2014
• Published: 01/22/2015
• Est. Priority Date: 07/16/2013
• Status: Abandoned Application

• Current Assignee: IMEC International
• Original Assignee: IMEC International
• Inventors: Min, Tai, PARASCHIV, Vasile, BOULLART, Werner, POPOVICI, Mihaela loana
• Application Number:
  US14/333,320
• Publication Number:
  US 20150021726A1
• Time in Patent Office: Days
• US Class Current: 257/421
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details

Abstract

The disclosed technology generally relates to methods of fabricating magnetic memory devices, and more particularly to methods of forming a magnetic tunnel junction (MTJ) stack. In one aspect, a method of forming the MTJ includes providing an MTJ material stack comprising a ferromagnetic material and forming thereon a protective mask layer to cover an active area of the MTJ material stack. The method additionally includes incorporating a glass-forming element into exposed portions of the ferromagnetic material. The method additionally includes at least partially amorphizing the exposed portions of the ferromagnetic material, wherein at least partially amorphizing transforms the exposed portions of the ferromagnetic material into an electrical insulator.

Claims

1. A method of patterning a magnetic tunnel junction (MTJ) element, comprising:

providing a stack of layers on a substrate, the stack comprising a tunneling barrier layer interposed between a top ferromagnetic layer and a bottom ferromagnetic layer;

defining outer parts surrounding a middle part for each of the top ferromagnetic layer, the tunneling barrier layer, and the bottom ferromagnetic layer; and

incorporating metal or metalloid elements (Z) together with ion elements (E) into the outer parts of the top ferromagnetic layer, thereby modifying the outer parts of the top ferromagnetic layer to have electrically insulating properties.

2. The method of claim 1, further comprising incorporating the metal or the metalloid elements (Z) together with the ion elements (E) into the outer parts of the bottom ferromagnetic layer, thereby modifying the outer parts of the bottom ferromagnetic layer to have electrically insulating properties.

3. The method of claim 1, wherein the insulating properties are amorphous glass-like properties.

4. The method of claim 1, wherein incorporating the metal or the metalloid elements (Z) together with the ion elements (E) comprises:

providing on the top ferromagnetic layer a metal layer comprising the metal or the metalloid elements (Z);

implanting the ion elements (E) into the metal layer; and

diffusing the metal or the metalloid elements (Z) and the ion elements (E) into at least one of the outer parts of the top ferromagnetic layer and the outer parts of the bottom ferromagnetic layer.

5. The method of claim 1, further comprising annealing the MTJ element after incorporating the metal or the metalloid elements (Z) together with the ion elements (E).

6. The method of claim 5, wherein annealing comprises annealing using a laser.

7. The method of claim 1, further comprising:

after providing the stack of layers and before incorporating the metal or the metalloid elements (Z) together with the ion elements (E), providing a hard mask on the middle part of the top ferromagnetic layer.

8. The method of claim 1, wherein the ion elements E are incorporated in the outer parts using gas-clustered ion beams.

9. The method of claim 1, wherein the ion elements E are chosen from the group consisting of nitrogen (N), oxygen (O) and fluorine (F).

10. The method of claim 1, wherein the metal or the metalloid elements (Z) includes a species chosen from the group consisting of glass network formers, glass network intermediates or a mixture thereof.

11. The method of claim 1, further comprising patterning the stack after incorporating the metal or the metalloid elements (Z) together with the ion elements (E).

12. The method of claim 1, further comprising thinning an upper portion of the top ferromagnetic layer before incorporating the metal or the metalloid elements (Z) together with the ion elements (E).

13. A magnetic tunnel junction (MTJ) element comprising:

a stack of layers comprising a tunneling barrier layer interposed between a top ferromagnetic layer and a bottom ferromagnetic layer,

wherein the top ferromagnetic layer comprises a ferromagnetic portion including a ferromagnetic material and an insulating portion laterally surrounding the ferromagnetic portion,

wherein the insulating portion comprises an amorphous glass including a mixture of the ferromagnetic material, an oxidizing element and a glass-forming element including a metal/metalloid element.

14. The MTJ element of claim 13, wherein the mixture includes at least one material selected from a group consisting of an amorphous insulating metal/metalloid-oxide, a metal/metalloid-fluoride and a metal/metalloid-nitride.

15. The MTJ element of claim 13, wherein the glass-forming element includes at least one element chosen from the group consisting of Si, Ge, P, V, As, Al, Sb, Zr, Ti, Pb, Be, and Zn.

16. A method of forming a magnetic tunnel junction (MTJ), comprising:

providing an MTJ material stack comprising a ferromagnetic material;

forming a protective mask layer to cover an active area of the MTJ material stack;

incorporating a glass-forming element into exposed portions of the ferromagnetic material, wherein the glass-forming element comprises a metal or a metalloid element; and

at least partially amorphizing the exposed portions of the ferromagnetic material,

wherein at least partially amorphizing transforms the exposed portions of the ferromagnetic material into an electrical insulator.

17. The method of claim 16, wherein the glass-forming element is chosen from the group consisting of Si, Ge, P, V, As, B Al, Sb, Zr, Ti, Pb, Be and Zn.

18. The method of claim 17, further comprising:

incorporating an oxidizing element chosen from the group consisting of oxygen, nitrogen and fluorine,

wherein at least partially amorphizing comprises forming a glass having an amorphous network formed by the glass-forming element, the oxidizing element and an element of the ferromagnetic material.

19. The method of claim 18, wherein at least one of the oxidizing element and the glass-forming element is implanted into the ferromagnetic material.

20. The method of claim 16,

wherein the MTJ material stack further comprises a bottom ferromagnetic material and a dielectric tunneling barrier interposed between the ferromagnetic material and the bottom ferromagnetic material,

wherein the method further comprises at least partially amorphizing a portion of the bottom ferromagnetic material overlapping with the exposed portions of the ferromagnetic material, thereby transforming the portion of the bottom ferromagnetic material into an electrical insulator.