METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS

• US 20150028291A1
• Filed: 10/23/2013
• Published: 01/29/2015
• Est. Priority Date: 07/25/2013
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Choi, Jai-Hyuk, Park, Jin-Woo, Lee, Ung-Soo, Choi, Su-Hyuk
• Granted Patent: US 9,324,967 B2
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H01L 33/52 Encapsulations
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/873 Encapsulations
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A method of manufacturing an organic light-emitting display apparatus includes disposing a low melting glass (LMG) thin film to cover a display unit disposed on a substrate, and radiating an energy beam onto the LMG thin film. Accordingly, an encapsulation layer having excellent sealing characteristics may be rapidly formed, and thus manufacturing process efficiency and product reliability may be improved.

Claims

1. A method of manufacturing an organic light-emitting display apparatus, comprising:

disposing a low melting glass (LMG) thin film to cover a display unit disposed on a substrate; and

radiating an energy beam onto the LMG thin film.

2. The method of claim 1, wherein the energy beam comprises any one of a laser beam, an electron beam, an ion beam, a neutron beam, a plasma beam, and a pulsed laser beam.

3. The method of claim 1, wherein the energy beam has any one of an infrared wavelength and an ultraviolet wavelength.

4. The method of claim 1, wherein the radiating of the energy beam is performed in an oxygen-containing atmosphere.

5. The method of claim 1, further comprising cooling the substrate during the radiating of the energy beam.

6. The method of claim 1, wherein the LMG thin film comprises tin oxide.

7. The method of claim 6, wherein the LMG thin film further comprises at least one of P₂O₅, tungsten (W), boron (B), niobium (Nb), TiO₂, ZnO, SiO₂, BaO, Al₂O₃, and B₂O₃.

8. The method of claim 7, wherein the tin oxide comprises stannous monoxide (SnO), and the SnO is oxidized into SnO₂ on a surface of the LMG thin film by the radiating the energy beam.

9. The method of claim 1, wherein a glass transition temperature of the LMG thin film is higher than a metamorphic temperature of the display unit.

10. The method of claim 1, wherein disposing the LMG thin film comprises any one of sputtering, evaporation, chemical vapor deposition (CVD), pulsed laser deposition (PLD), and plasma spraying.

11. The method of claim 1, wherein the substrate comprises a glass substrate.

12. The method of claim 1, wherein the substrate comprises a flexible substrate.

13. A method of manufacturing a sealing structure using a low melting material, comprising:

disposing a low melting material to seal a sealing object disposed on a substrate, the low melting material having a transition temperature lower than a transition temperature of silicon dioxide (SiO₂); and

radiating an energy beam onto the low melting material to heat an exposed surface of the low melting material to a heating temperature at or above the transition temperature of the low melting material.

14. The method of claim 13, wherein radiating the energy beam comprises controlling the heating temperature and a radiation time of the energy beam such that the radiation of the energy beam does not degrade or damage the sealing object.

15. The method of claim 13, wherein radiating the energy beam comprises controlling the heating temperature and a radiation time of the energy beam based on a metamorphic temperature of the sealing object.

16. The method of claim 13, wherein the sealing object comprises an organic light-emitting display device, and the low melting material comprises a low melting glass (LMG) thin film.

17. The method of claim 16, wherein the LMG thin film comprises stannous monoxide (SnO), and

wherein the exposed surface of the LMG thin film is oxidized into SnO₂ by the radiation of the energy beam.

18. The method of claim 16, wherein the LMG thin film has a glass transition temperature of about 250°

C. to about 400°

C.

19. The method of claim 13, further comprising cooling the substrate.

20. An organic light-emitting display apparatus, comprising:

a substrate;

an organic light-emitting device disposed on the substrate; and

a low melting glass (LMG) thin film disposed on the organic light-emitting device to seal the organic light-emitting device, the LMG thin film comprising a sealing layer that corresponds to an energy-beam-irradiated portion of the LMG thin film.

21. The organic light-emitting display apparatus of claim 20, wherein the sealing layer is formed at an exposed surface of the LMG thin film, and

wherein the sealing layer comprises stannic oxide (SnO₂).

22. The organic light-emitting display apparatus of claim 20, wherein the LMG thin film having a thickness of about 0.1 μ

m to about 30 μ

m.

23. The organic light-emitting display apparatus of claim 20, wherein the substrate comprises a flexible substrate, and

wherein the LMG thin film having a thickness of about 0.1 μ

m to about 5 μ

m.

24. The organic light-emitting display apparatus of claim 20, further comprising a protection layer disposed between the LMG thin film and the organic light-emitting device, the protection layer comprising at least one of an inorganic insulating film and an organic insulating film.