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Controlled Ion Implantation Into Silicon Carbide Using Channeling And Devices Fabricated Using Controlled Ion Implantation Into Silicon Carbide Using Channeling

  • US 20150028350A1
  • Filed: 05/19/2014
  • Published: 01/29/2015
  • Est. Priority Date: 07/26/2013
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor structure, comprising:

  • providing a silicon carbide layer having a crystallographic axis;

    heating the silicon carbide layer to a temperature of about 300°

    C. or more;

    implanting dopant ions into the heated silicon carbide layer at an implant angle between a direction of implantation and the crystallographic axis of less than about 2°

    ; and

    annealing the silicon carbide layer at a time-temperature product of less than about 30,000°

    C.-hours to activate the implanted ions.

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