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FINFET STRUCTURES HAVING SILICON GERMANIUM AND SILICON CHANNELS

  • US 20150028454A1
  • Filed: 07/24/2013
  • Published: 01/29/2015
  • Est. Priority Date: 07/24/2013
  • Status: Active Grant
First Claim
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1. A method comprising:

  • forming a patterned mandrel layer on a semiconductor substrate, the patterned mandrel layer including mandrel portions having side walls;

    recessing one or more portions of the semiconductor substrate to form one or more trenches within the semiconductor substrate;

    epitaxially growing a silicon germanium layer within the one or more trenches;

    forming spacers on the side walls of the mandrel portions;

    removing the mandrel portions from the semiconductor substrate, andremoving portions of the semiconductor substrate and the silicon germanium layer between the spacers, thereby forming a first plurality of parallel fins from the semiconductor substrate and a second plurality of parallel fins from the silicon germanium layer.

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