FINFET STRUCTURES HAVING SILICON GERMANIUM AND SILICON CHANNELS
First Claim
1. A method comprising:
- forming a patterned mandrel layer on a semiconductor substrate, the patterned mandrel layer including mandrel portions having side walls;
recessing one or more portions of the semiconductor substrate to form one or more trenches within the semiconductor substrate;
epitaxially growing a silicon germanium layer within the one or more trenches;
forming spacers on the side walls of the mandrel portions;
removing the mandrel portions from the semiconductor substrate, andremoving portions of the semiconductor substrate and the silicon germanium layer between the spacers, thereby forming a first plurality of parallel fins from the semiconductor substrate and a second plurality of parallel fins from the silicon germanium layer.
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Accused Products
Abstract
Silicon and silicon germanium fins are formed on a semiconductor wafer or other substrate in a manner that facilitates production of closely spaced nFET and pFET devices. A patterned mandrel layer is employed for forming one or more recesses in the wafer prior to the epitaxial growth of a silicon germanium layer that fills the recess. Spacers are formed on the side walls of the patterned mandrel layer followed by removal of the mandrel layer. The exposed areas of the wafer and silicon germanium layer between the spacers are etched to form fins usable for nFET devices from the wafer and fins usable for pFET devices from the silicon germanium layer.
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Citations
20 Claims
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1. A method comprising:
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forming a patterned mandrel layer on a semiconductor substrate, the patterned mandrel layer including mandrel portions having side walls; recessing one or more portions of the semiconductor substrate to form one or more trenches within the semiconductor substrate; epitaxially growing a silicon germanium layer within the one or more trenches; forming spacers on the side walls of the mandrel portions; removing the mandrel portions from the semiconductor substrate, and removing portions of the semiconductor substrate and the silicon germanium layer between the spacers, thereby forming a first plurality of parallel fins from the semiconductor substrate and a second plurality of parallel fins from the silicon germanium layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method comprising:
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obtaining a structure comprising a semiconductor substrate having a top surface, one or more trenches within the semiconductor substrate, one or more silicon germanium regions within the one or more trenches, each of the one or more silicon germanium regions including a top surface coplanar with the top surface of the semiconductor substrate, a plurality of mandrel portions on the top surface of the substrate, the mandrel portions having sidewalls, and a plurality of spacers on the sidewalls of the mandrel portions, and forming one or more semiconductor fins from the semiconductor substrate and one or more silicon germanium fins parallel to the one or more semiconductor fins from the one or more silicon germanium regions using sidewall image transfer. - View Dependent Claims (13, 14, 15, 16)
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17. A structure comprising:
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a substrate comprised of crystalline silicon, the substrate including a body portion and one or more first fins comprised of crystalline silicon extending from and integral with the body portion, and one or more second fins comprising silicon germanium and integral with the body portion of the substrate, the one or more second fins being parallel to the one or more first fins, at least one of the one or more second fins being within less than 30 nm of at least one of the one or more first fins. - View Dependent Claims (18, 19, 20)
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Specification