SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprising:
- two or more semiconductor elements each of which has electrodes on a first main surface and a second main surface;
an electrode plate that has one surface which is bonded to the first main surfaces of the two or more semiconductor elements, with a first bonding material layer interposed therebetween;
a conductive plate that includes a first lead terminal and a semiconductor element bonding portion which is bonded to the second main surfaces of the two or more semiconductor elements, with a second bonding material layer interposed therebetween; and
a second lead terminal that is connected to another surface of the electrode plate by a bonding wire.
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Accused Products
Abstract
A semiconductor device can reduce the number of bonding wires. The semiconductor device includes two or more semiconductor elements each of which has electrodes on a first main surface and a second main surface, an electrode plate that has one surface which is bonded to electrodes on the first main surfaces of the semiconductor elements, with a first bonding material layer interposed therebetween, and extends over the electrodes on the first main surfaces of the two or more semiconductor elements, and a conductive plate that includes a first lead terminal and a semiconductor element bonding portion which is bonded to electrodes on the second main surfaces of the semiconductor elements. A second bonding material layer is interposed therebetween, and is connected to the electrodes on the second main surfaces of the two or more semiconductor elements.
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Citations
20 Claims
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1. A semiconductor device comprising:
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two or more semiconductor elements each of which has electrodes on a first main surface and a second main surface; an electrode plate that has one surface which is bonded to the first main surfaces of the two or more semiconductor elements, with a first bonding material layer interposed therebetween; a conductive plate that includes a first lead terminal and a semiconductor element bonding portion which is bonded to the second main surfaces of the two or more semiconductor elements, with a second bonding material layer interposed therebetween; and a second lead terminal that is connected to another surface of the electrode plate by a bonding wire. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 19, 20)
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9. A semiconductor device comprising:
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two or more semiconductor elements each of which has electrodes on a first main surface and a second main surface; an electrode plate that includes a first lead terminal and a bonding portion which is formed on one surface and is bonded to the first main surfaces of the two or more semiconductor elements, with a first bonding material layer interposed therebetween; and a conductive plate that includes a second lead terminal and a semiconductor element bonding portion which is bonded to the second main surfaces of the two or more semiconductor elements, with a second bonding material layer interposed therebetween, wherein the semiconductor elements are arranged such that a longitudinal direction thereof is parallel to the second lead terminal. - View Dependent Claims (10, 11, 17, 18)
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12. A semiconductor device comprising:
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two or more semiconductor elements each of which has electrodes on a first main surface and a second main surface; an electrode plate that includes a bonding portion which is formed on one surface and is bonded to the first main surfaces of the two or more semiconductor elements, with a first bonding material layer interposed therebetween, and extends from the bonding portion through a bent portion; a conductive plate that includes a first lead terminal and a semiconductor element bonding portion which is bonded to the second main surfaces of the semiconductor elements, with a second bonding material layer interposed therebetween, and is connected to the second main surfaces of the two or more semiconductor elements; and a second lead terminal that is bonded to the connection portion of the electrode plate, with a third bonding material layer interposed therebetween, wherein the semiconductor elements are arranged such that a longitudinal direction thereof is parallel to the first lead terminal. - View Dependent Claims (13, 14)
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15. A semiconductor device comprising:
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two or more semiconductor elements, each of which has electrodes on a first main surface and a second main surface and is arranged such that a longitudinal direction thereof is parallel to an injection direction of a molding resin sealing; an electrode plate that includes a first lead terminal and a bonding portion which is formed on one surface, is bonded to the first main surfaces of the two or more semiconductor elements, with a first bonding material layer interposed therebetween, extends over the first main surfaces of the semiconductor elements, and has convex portions formed in bonding portions to the first main surfaces of the semiconductor elements; and a conductive plate that includes a second lead terminal and a semiconductor element bonding portion which is bonded to the two or more semiconductor elements, with a second bonding material layer interposed therebetween. - View Dependent Claims (16)
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Specification