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SEMICONDUCTOR LIGHT EMITTING ELEMENT

  • US 20150034901A1
  • Filed: 11/07/2012
  • Published: 02/05/2015
  • Est. Priority Date: 02/06/2012
  • Status: Abandoned Application
First Claim
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1. A semiconductor light emitting element comprising:

  • a first electrode;

    a semiconductor unit of group III-V compound semiconductors; and

    a second electrode, whereinthe semiconductor unit is provided between the first electrode and the second electrode,the semiconductor unit comprises an active layer and a photonic crystal layer,the photonic crystal layer is provided in either of positions between the active layer and the first electrode, and between the active layer and the second electrode,conductivity types between the active layer and the first electrode and between the active layer and the second electrode differ from each other,the first electrode is provided with an opening,the first electrode, the active layer, the photonic crystal layer, and the second electrode are stacked along a reference axis,the reference axis passes through a central part of the opening when viewed from an axis line direction of the reference axis,the second electrode comprises a first end positioned in a first direction when viewed from the axis line direction of the reference axis, and a second end positioned in a second direction that is a direction opposite to the first direction,the opening has a third end positioned in the first direction when viewed from the axis line direction of the reference axis, and a fourth end positioned in the second direction, andthe first end of the second electrode and the third end of the opening substantially coincide with each other when viewed from the axis line direction of the reference axis.

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