SEMICONDUCTOR LIGHT EMITTING ELEMENT

• US 20150034901A1
• Filed: 11/07/2012
• Published: 02/05/2015
• Est. Priority Date: 02/06/2012
• Status: Abandoned Application

• Current Assignee: Hamamatsu Photonics KK, Kyoto University
• Original Assignee: Hamamatsu Photonics KK, Kyoto University
• Inventors: Noda, Susumu, Kurosaka, Yoshitaka, Watanabe, Akiyoshi, Hirose, Kazuyoshi, Sugiyama, Takahiro
• Application Number:
  US14/373,967
• Publication Number:
  US 20150034901A1
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/105 with a resonant cavity structure
• CPC Class Codes: H01S 2301/02 ASE (amplified spontaneous emission), noise; Reduction thereof
• CPC Class Codes: H01S 2301/176 Specific passivation layers on surfaces other than the emission facet
• CPC Class Codes: H01S 5/04253 having specific optical properties, e.g. transparent electrodes
• CPC Class Codes: H01S 5/11 Comprising a photonic bandgap structure
• CPC Class Codes: H01S 5/183 having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• CPC Class Codes: H01S 5/185 having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] comprising a photonic bandgap structure H01S5/11

Abstract

A semiconductor light emitting element includes an electrode 8, an active layer 3, a photonic crystal layer 4, and an electrode 9. Conductivity types between the active layer 3 and the electrode 8 and between the active layer 3 and the electrode 9 differ from each other. The electrode 8, the active layer 3, the photonic crystal layer 4, and the electrode 9 are stacked along the X-axis. The X-axis passes through a central part 8a2 of the opening 8a when viewed from the axis line direction of the X-axis. The end 9e1 of the electrode 9 and the end 8e1 of the opening 8a substantially coincide with each other when viewed from the axis line direction of the X-axis.

Claims

1. A semiconductor light emitting element comprising:

a first electrode;

a semiconductor unit of group III-V compound semiconductors; and

a second electrode, wherein

the semiconductor unit is provided between the first electrode and the second electrode,

the semiconductor unit comprises an active layer and a photonic crystal layer,

the photonic crystal layer is provided in either of positions between the active layer and the first electrode, and between the active layer and the second electrode,

conductivity types between the active layer and the first electrode and between the active layer and the second electrode differ from each other,

the first electrode is provided with an opening,

the first electrode, the active layer, the photonic crystal layer, and the second electrode are stacked along a reference axis,

the reference axis passes through a central part of the opening when viewed from an axis line direction of the reference axis,

the second electrode comprises a first end positioned in a first direction when viewed from the axis line direction of the reference axis, and a second end positioned in a second direction that is a direction opposite to the first direction,

the opening has a third end positioned in the first direction when viewed from the axis line direction of the reference axis, and a fourth end positioned in the second direction, and

the first end of the second electrode and the third end of the opening substantially coincide with each other when viewed from the axis line direction of the reference axis.

3. The semiconductor light emitting element according to claim 1, wherein a transmission light intensity of the first electrode decreases as a distance from the outer circumference of the opening increases.

4. The semiconductor light emitting element according to claim 1, further comprising a distributed Bragg reflector (DBR) layer, wherein

the DBR layer is provided in either of positions between the first electrode and the photonic crystal layer, and between the second electrode and the photonic crystal layer.

5. The semiconductor light emitting element according to claim 1, further comprising a first DBR layer and a second DBR layer, wherein

the first DBR layer is provided between the first electrode and the photonic crystal layer, and

the second DBR layer is provided between the second electrode and the photonic crystal layer.

2. A semiconductor light emitting element comprising:

a first electrode;

a semiconductor unit of group III-V compound semiconductors; and

a second electrode, wherein

the semiconductor unit is provided between the first electrode and the second electrode,

the semiconductor unit comprises an active layer and a photonic crystal layer,

the photonic crystal layer is provided in either of positions between the active layer and the first electrode, and between the active layer and the second electrode,

conductivity types between the active layer and the first electrode and between the active layer and the second electrode differ from each other,

the first electrode is provided with an opening, and

a minimum value of an intensity of light that is output from the active layer and the photonic crystal layer and reaches the opening is not less than A % (satisfying 10≦

A≦

30) of a maximum value of the intensity of the light that is output from the active layer and the photonic crystal layer and reaches the opening.