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INTEGRATED CIRCUITS HAVING FINFET SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME TO RESIST SUB-FIN CURRENT LEAKAGE

  • US 20150034941A1
  • Filed: 07/31/2013
  • Published: 02/05/2015
  • Est. Priority Date: 07/31/2013
  • Status: Active Grant
First Claim
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1. A method of fabricating an integrated circuit having a FinFET, wherein the method comprises:

  • providing a substrate comprising fins, wherein the fins comprise semiconductor material;

    forming a first metal oxide layer over sidewall surfaces of the fins, wherein the first metal oxide layer comprises a first metal oxide;

    recessing the first metal oxide layer to a depth below a top surface of the fins to form a recessed first metal oxide layer, wherein the top surface and sidewall surfaces of the fins at a top portion thereof are free from the first metal oxide layer; and

    forming a gate electrode structure over the top surface and sidewall surfaces of the fins at the top portion thereof, wherein the recessed first metal oxide layer is recessed beneath the gate electrode structure.

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