LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE

• US 20150034988A1
• Filed: 09/15/2014
• Published: 02/05/2015
• Est. Priority Date: 03/09/2010
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: JEONG, HWAN HEE, CHOI, KWANG KI, LEE, SANG YOUL, SONG, JUNE O, MOON, JI HYUNG
• Granted Patent: US 9,312,450 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: F21K 9/23 Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
• CPC Class Codes: F21W 2131/103 of streets or roads
• CPC Class Codes: F21Y 2105/10 comprising a two-dimensional array of point-like light-generating elements
• CPC Class Codes: F21Y 2113/13 comprising an assembly of point-like light sources
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first electrode, a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer on the first electrode, a nano-tube layer including a plurality of carbon nano tubes on the light emitting structure, and a second electrode on the light emitting structure.

Claims

1. A light emitting device comprising:

a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer;

a nano-tube layer including carbon nano tubes on the second semiconductor layer to partially expose the second semiconductor layer;

a first electrode electrically connected to one of the first and second semiconductor layers;

a second electrode electrically connected to the other of the first and second semiconductor layers,

wherein the second electrode is the exposed area of the second semiconductor layer.

2. The light emitting device of claim 1, wherein the nano-tube layer has a thickness in a range of about 10 nm to about 10 μ

m.

3. The light emitting device of claim 1, wherein the nano-tube layer is at least 70% of an area of a top surface of the light emitting structure.

4. The light emitting device of claim 1, wherein the second electrode contacts the nano-tube layer.

5. The light emitting device of claim 4, wherein the nano-tube layer is patterned.

6. The light emitting device of claim 5,

wherein a part of the second electrode is disposed on a part of the nano-tube layer.

7. The light emitting device of claim 6,

wherein the part of the nano-tube layer is disposed between the part of the second electrode and the second semiconductor layer.

8. The light emitting device of claim 7, wherein a surface of the second electrode in contact with the second semiconductor layer is patterned.

9. The light emitting device of claim 1, wherein the nano-tube layer has a refractive index lower than a refractive index of the light emitting structure.

10. The light emitting device of claim 1, further comprising a concavo-convex structure on the light emitting structure.

11. The light emitting device of claim 10, wherein the nano-tube layer has a shape corresponding to the concavo-convex structure.

12. The light emitting device of claim 1, wherein the first electrode includes a support member having conductivity.

13. The light emitting device of claim 1, further comprising at least one of a reflective layer and an ohmic contact layer between the first electrode and the light emitting structure.

14. The light emitting device of claim 13, further comprising a current blocking layer disposed between the at least one of the reflective layer and the ohmic contact layer and the light emitting structure and partially overlapping with the second electrode in a vertical direction.

15. The light emitting device of claim 13, further comprising a protection layer at an outer peripheral portion between the reflective layer and the light emitting structure.

16. The light emitting device of claim 1, further comprising a passivation layer on at least a lateral surface of the light emitting structure.

17. A light emitting device comprising:

a substrate;

a light emitting structure on the substrate and including a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer;

a first electrode electrically connected to the first semiconductor layer;

a nano-tube layer on the second semiconductor layer;

a current blocking layer between the second semiconductor layer and the nano-tube layer; and

a second electrode on the nano-tube layer,

wherein a portion of the nano-tube layer is disposed between the current blocking layer and the second electrode,

wherein the portion of the nano-tube layer disposed between the current blocking layer and the second electrode contacts atop surface of the current blocking layer, and

wherein the second electrode contacts a portion of the current blocking layer and the portion of the nano-tube layer.

18. The light emitting device of claim 17,

wherein the nano-tube layer includes a through-hole, and

wherein a portion of the second electrode is disposed in the through-hole.

19. The light emitting device of claim 18, wherein the current blocking layer is disposed in the through-hole.

20. The light emitting device of claim 17, wherein the top surface of the current blocking layer is higher than a bottom surface of the nano-tube layer.