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A SUPPER JUNCTION STRUCTURE INCLUDES A THICKNESS OF FIRST AND SECOND SEMICONDUCTOR REGIONS GRADUALLY CHANGED FROM A TRANSISTOR AREA INTO A TERMINATION AREA

  • US 20150035048A1
  • Filed: 07/31/2013
  • Published: 02/05/2015
  • Est. Priority Date: 07/31/2013
  • Status: Active Grant
First Claim
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1. A super junction semiconductor device, comprising:

  • a super junction structure including first and second areas alternately arranged along a first lateral direction and extending in parallel along a second lateral direction;

    each one of the first areas includes a first semiconductor region of a first conductivity type;

    each one of the second areas includes, along the first lateral direction, an inner area between opposite second semiconductor regions of a second conductivity type opposite to the first conductivity type; and

    whereina width w1 of the first of the first semiconductor region in a transistor cell area is greater than in an edge termination area, and a width w2 of each one of the second semiconductor regions in the transistor cell area is greater than in the edge termination area.

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