SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, AND ELECTRONIC EQUIPMENT
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate;
a wiring layer that is formed on the semiconductor substrate;
a drive circuit that is provided in a circuit forming region of the semiconductor substrate;
a pad electrode that is electrically connected to the drive circuit and exposed from the side surface of the wiring layer; and
an external connection terminal that is provided in side surfaces of the semiconductor substrate and the wiring layer, and is electrically connected to the pad electrode.
1 Assignment
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Accused Products
Abstract
The present technology relates to a semiconductor device, a manufacturing method of a semiconductor device, a semiconductor wafer, and electronic equipment, which allow a semiconductor device, in which miniaturization is possible, to be provided.
A semiconductor device includes a semiconductor substrate, a wiring layer that is formed on the semiconductor substrate, and a drive circuit that is provided in a circuit forming region of the semiconductor substrate. Then, the semiconductor device 110 is configured to include a pad electrode 103 that is electrically connected to the drive circuit and exposed from the side surface of the wiring layer, and an external connection terminal 108 that is provided in side surfaces of the semiconductor substrate and the wiring layer, and is electrically connected to the pad electrode 103.
31 Citations
16 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate; a wiring layer that is formed on the semiconductor substrate; a drive circuit that is provided in a circuit forming region of the semiconductor substrate; a pad electrode that is electrically connected to the drive circuit and exposed from the side surface of the wiring layer; and an external connection terminal that is provided in side surfaces of the semiconductor substrate and the wiring layer, and is electrically connected to the pad electrode. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor wafer comprising:
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a plurality of circuit forming regions; a scribe region that is arranged to surround the circuit forming regions; a drive circuit that is provided in the circuit forming regions; a pad electrode that is electrically connected to the drive circuit and formed from an end of the circuit forming region to the scribe region; an opening portion that is formed on the pad electrode; and a conductor layer that is formed on a side surface and a lower surface of the opening portion and is electrically connected to the drive circuit. - View Dependent Claims (7)
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8. A manufacturing method of a semiconductor device, comprising:
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a process of forming a drive circuit in a circuit forming region of a semiconductor substrate; a process of forming a wiring layer on the semiconductor substrate; a process of forming a pad electrode in the wiring layer; a process of forming an opening portion for exposing the pad electrode in a surface, from the circuit forming region to a scribe region; a process of forming a conductor layer in a side surface of the opening portion; and a process of singulating the circuit forming region in the scribe region. - View Dependent Claims (9)
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10. A manufacturing method of a semiconductor device, comprising:
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a process of forming a drive circuit in a circuit forming region of a semiconductor substrate; a process of forming a wiring layer on a semiconductor substrate; a process of forming a pad electrode in the wiring layer; a process of forming a penetrating electrode which penetrates the semiconductor substrate and is connected to the pad electrode; a process of forming an opening portion for exposing the pad electrode in a surface and exposing the penetrating electrode in a side surface, from the circuit forming region to the scribe region; and a process of singulating the circuit forming region in the scribe region.
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11. Electronic equipment comprising:
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a semiconductor device including a semiconductor substrate, a wiring layer that is formed on the semiconductor substrate, a drive circuit that is provided in a circuit forming region of the semiconductor substrate, a pad electrode that is electrically connected to the drive circuit and exposed from the side surface of the wiring layer, and an external connection terminal that is provided in side surfaces of the semiconductor substrate and the wiring layer, and is electrically connected to the pad electrode; and a signal processing circuit that processes an output signal of the semiconductor device.
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12. A semiconductor device comprising:
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a first semiconductor substrate and a second semiconductor substrate, wherein the first semiconductor substrate includes; a wiring layer that is formed on the first semiconductor substrate; a drive circuit that is provided in a circuit forming region of the first semiconductor substrate; and an external connection terminal that is provided in side surfaces of the first semiconductor substrate and the wiring layer, wherein the second semiconductor substrate includes; a wiring layer that is formed on the second semiconductor substrate; a drive circuit that is provided in a circuit forming region of the second semiconductor substrate; and an external connection terminal that is provided in side surfaces of the second semiconductor substrate and the wiring layer, and wherein the first semiconductor substrate and the second semiconductor substrate are laminated. - View Dependent Claims (13, 14, 15)
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16. A manufacturing method of a semiconductor device, comprising:
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a process of forming a drive circuit in a circuit forming region of a first semiconductor substrate; a process of forming a wiring layer on the first semiconductor substrate; a process of forming an opening portion in a scribed region of the first semiconductor substrate; a process of forming a conductor layer in the opening portion of the first semiconductor substrate; a process of forming a drive circuit in a circuit forming region of a second semiconductor substrate; a process of forming a wiring layer on the second semiconductor substrate; a process of forming an opening portion in a scribed region of the second semiconductor substrate; a process of forming a conductor layer in the opening portion of the second semiconductor substrate; a process of laminating the first semiconductor substrate and the second semiconductor substrate; and a process of singulating the first semiconductor substrate and the second semiconductor substrate in the scribe region.
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Specification