ACTIVE CONTROL PROCEDURES FOR THE CONNECTION OF VERY CAPACITIVE LOADS USING SSPCs

• US 20150035498A1
• Filed: 02/28/2011
• Published: 02/05/2015
• Est. Priority Date: 12/22/2010
• Status: Abandoned Application

• Current Assignee: EADS Construcciones Aeronauticas SA (Airbus SE), Universidad Carlos Iii De Madrid
• Original Assignee: Andres Barrado Bautista
• Inventors: Izquierdo, Gil, Barrado Bautista, Andres, Sanz Garcia, Clara Marina, Hernandez Morgado, Roberto Carlos
• Application Number:
  US13/996,423
• Publication Number:
  US 20150035498A1
• Time in Patent Office: Days
• US Class Current: 320/166
• CPC Class Codes: H02J 7/00 Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
• CPC Class Codes: H02J 7/007 Regulation of charging or discharging current or voltage
• CPC Class Codes: H02J 7/345 using capacitors as storage or buffering devices
• CPC Class Codes: H03K 17/166 Soft switching
• CPC Class Codes: Y02T 50/50 On board measures aiming to increase energy efficiency

Abstract

Procedures for the connection of a very capacitive load to a voltage bus of an electric distribution system, by using a solid state power controller, where the current through the SSPC is controlled actively by maintaining one of its parameters (the current and/or the derivative of the current) constant during the entire connection time of said very capacitive load or during each one of a set of stretches of said connection time. The invention also refers to SSPCs structured to carry out said procedures.

Claims

1-12. -12. (canceled)

13. A procedure for the connection of a capacitive load to a voltage bus of an electric distribution system using a solid state power controller (SSPC), comprising the step of actively controlling a current through the SSPC during an entire connection time until the capacitive load is charged up to a voltage of the voltage bus by maintaining constant a derivative of the current during one or a set of stretches of the connection time until the current reaches a value equal to a maximum value endured by the SSPC and by maintaining constant that value of the current in a final stretch.

14. A procedure according to claim 13, wherein a capacity of said capacitive load is greater than 150 microfarads.

15. A procedure according to claim 13, wherein a voltage of the voltage bus is 270v.

16. A procedure according to claim 13, wherein the derivative of the current is maintained constant during an first stretch of the connection time until the current reaches a value equal to the maximum value endured by the SSPC and by maintaining constant that value of the current during a second stretch of the connection time.

17. A procedure according to claim 16, wherein the first stretch comprises between 70% and 80% of the connection time, and the second stretch comprises between 30% and 20% of the connection time.

18. A procedure according to claim 13, wherein the derivative of the current is maintained constant during a set of first stretches of the connection time, until the current reaches a value equal to the maximum value endured by the SSPC and by maintaining constant that value of the current during a final stretch of the connection time.

19. A procedure according to claim 18, wherein during all said stretches the current is inside the semiconductor safe operation curve of the SSPC.

20. An SSPC for connecting a capacitive load to a voltage bus of an electrical distribution system, the SSPC comprising a semiconductor, a driver, a microcontroller, an internal power source, a measuring device for the SSPC current, and a measuring device for the load voltage, and current control circuits connected to said microcontroller and said driver which allow carrying out of a connecting procedure of said capacitive load according to claim 13.

21. An SSPC according to claim 20, wherein said current control circuits comprise suitable components to carry out the active control of the current through the SSPC regulating the voltage of the control entrance of the semiconductor.

22. An SSPC, according to claim 21, wherein the semiconductor is a MOSFET.

23. An SSPC, according claim 21, wherein the semiconductor is an IGBT.