SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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Accused Products
Abstract
A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.
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Citations
19 Claims
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1. (canceled)
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2. A method for manufacturing a semiconductor device comprising steps of:
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forming a first insulating film; forming an oxide semiconductor film over the first insulating film; forming a second insulating film with a projection portion and a depression portion from the first insulating film and an oxide semiconductor layer on the projection portion from the oxide semiconductor film; forming a third insulating film covering and in contact with the second insulating film and the oxide semiconductor layer; forming a fourth insulating film covering the third insulating film and filling the depression portion; performing planarization on the fourth insulating film until part of the third insulating film overlapping with the oxide semiconductor layer is exposed; removing the part of the third insulating film so that a top surface of the oxide semiconductor film is exposed and a side surface of the oxide semiconductor layer is covered by the third insulating film; forming a gate insulating film over the oxide semiconductor film; forming a gate electrode over the gate insulating film; adding dopant to the oxide semiconductor layer using the gate electrode as a mask; and forming a sidewall insulating layer in contact with the gate electrode after adding the dopant to the oxide semiconductor layer. - View Dependent Claims (3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor device comprising steps of:
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forming a first insulating film; forming an oxide semiconductor film over the first insulating film; forming a second insulating film with a projection portion and a depression portion from the first insulating film and an oxide semiconductor layer on the projection portion from the oxide semiconductor film; forming a third insulating film covering and in contact with the second insulating film and the oxide semiconductor layer; forming a fourth insulating film covering the third insulating film and filling the depression portion; performing planarization on the fourth insulating film until part of the third insulating film overlapping with the oxide semiconductor layer is exposed; removing the part of the third insulating film so that a top surface of the oxide semiconductor film is exposed and a side surface of the oxide semiconductor layer is covered by the third insulating film; forming a gate insulating film over the oxide semiconductor film; forming a gate electrode over the gate insulating film; adding dopant to the oxide semiconductor layer using the gate electrode as a mask; forming a sidewall insulating layer in contact with the gate electrode after adding the dopant to the oxide semiconductor layer; forming an electrode comprising a first conductive layer in contact with the oxide semiconductor layer and the sidewall insulating layer and a second conductive layer on the first conductive layer, and wherein width of the first conductive layer is larger than width of the second conductive layer. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A method for manufacturing a semiconductor device comprising steps of:
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forming a first insulating film; forming an oxide semiconductor film over the first insulating film; forming a second insulating film with a projection portion and a depression portion from the first insulating film and an oxide semiconductor layer on the projection portion from the oxide semiconductor film; forming a third insulating film covering and in contact with the second insulating film and the oxide semiconductor layer; forming a fourth insulating film covering the third insulating film and filling the depression portion; performing planarization treatment on the fourth insulating film and the third insulating film until a top surface of the oxide semiconductor film is exposed; forming a gate insulating film over the oxide semiconductor film; forming a gate electrode over the gate insulating film; adding dopant to the oxide semiconductor layer using the gate electrode as a mask; and forming a sidewall insulating layer in contact with the gate electrode after adding the dopant to the oxide semiconductor layer. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification