METHOD OF FABRICATING DISPLAY DEVICE

• US 20150037943A1
• Filed: 11/15/2013
• Published: 02/05/2015
• Est. Priority Date: 08/02/2013
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: KIM, Dong Il, KIM, Sang Gab, PARK, Ji Young
• Granted Patent: US 9,466,623 B2
• Time in Patent Office: Days
• US Class Current: 438/158
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/121 common or background
• CPC Class Codes: G02F 2201/123 pixel
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask

Abstract

A method of fabricating a display device includes forming a thin-film transistor including a gate electrode, a source electrode and a drain electrode on a substrate, forming a first insulating layer and a second insulating layer on the thin-film transistor, forming a common electrode on the second insulating layer by depositing a common electrode material on the second insulating layer, plasma-treating a photoresist pattern on the common electrode material, and etching the common electrode material using the plasma-treated photoresist pattern as a mask, defining a contact hole in the second insulating layer which corresponds to the drain electrode using the plasma-treated photoresist pattern and the common electrode as a mask, forming a third insulating layer on the second insulating layer and the common electrode to expose the contact hole and the drain electrode and forming a pixel electrode connected to the drain electrode on the third insulating layer.

Claims

1. A method of fabricating a display device, the method comprising:

forming a thin-film transistor, which comprises a gate electrode, a source electrode and a drain electrode, on a substrate;

forming a first insulating layer and a second insulating layer on the thin-film transistor;

forming a common electrode on the second insulating layer by depositing a common electrode material on the second insulating layer,

providing a photoresist pattern on the common electrode material and plasma-treating a surface of the photoresist pattern provided on the common electrode material,

etching the common electrode material;

defining a contact hole in a region of the second insulating layer which corresponds to the drain electrode by using the plasma-treated photoresist pattern and the common electrode as a mask;

forming a third insulating layer on the second insulating layer and the common electrode to expose the contact hole and the drain electrode; and

forming a pixel electrode, which is connected to the drain electrode, on the third insulating layer.

2. The method of claim 1, wherein the forming the second insulating layer is achieved by coating an organic material on a whole surface of the first insulating layer.

3. The method of claim 1, wherein the defining the contact hole is achieved by a dry-etching method.

4. The method of claim 1, wherein in the defining the contact hole, a thickness of the plasma-treated photoresist pattern is smaller than a depth of the contact hole.

5. The method of claim 1, wherein the plasma-treating of the surface of the photoresist pattern uses hydrogen bromide plasma which comprises hydrogen bromide.

6. The method of claim 1, wherein the common electrode includes indium zinc oxide or amorphous-indium tin oxide.

7. The method of claim 1, wherein

the forming the thin-film transistor comprises forming a common line on the substrate,

the forming the third insulating layer comprises exposing the common line and the common electrode, and

the forming the pixel electrode comprises forming a connection electrode which connects the common line and the common electrode.

8. The method of claim 1, further comprising forming a black matrix or a color filter between the first insulating layer and the second insulating layer.

17. The method of claim 1, wherein

the plasma-treating the surface of the photoresist pattern provided on the common electrode material is before the etching the common electrode material, and

the etching the common electrode uses the plasma-treated photoresist pattern as a mask.

18. The method of claim 1, wherein

the etching the common electrode material is before the plasma-treating the surface of the photoresist pattern provided on the common electrode material, and

the etching the common electrode uses the photoresist pattern provided on the common electrode material as a mask.

9-16. -16. (canceled)