SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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Abstract
An object is to reduce a capacitance value of parasitic capacitance without decreasing driving capability of a transistor in a semiconductor device such as an active matrix display device. Further, another object is to provide a semiconductor device in which the capacitance value of the parasitic capacitance was reduced, at low cost. An insulating layer other than a gate insulating layer is provided between a wiring which is formed of the same material layer as a gate electrode of the transistor and a wiring which is formed of the same material layer as a source electrode or a drain electrode.
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Citations
13 Claims
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1. (canceled)
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2. A semiconductor device comprising:
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a first wiring over a substrate; a gate insulating layer over the first wiring; an oxide semiconductor layer over the gate insulating layer; a second wiring electrically connected to the oxide semiconductor layer, wherein the number of insulating layers between the first wiring and the oxide semiconductor layer is different from the number of insulating layers between the first wiring and the second wiring. - View Dependent Claims (3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a first wiring over a substrate; a gate insulating layer over the first wiring; an oxide semiconductor layer over the gate insulating layer; a second wiring electrically connected to the oxide semiconductor layer, wherein a total thickness of insulating layers between the first wiring and the oxide semiconductor layer is different from a total thickness of insulating layers between the first wiring and the second wiring. - View Dependent Claims (9, 10, 11, 12, 13)
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Specification