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METHOD FOR FORMING SHIELDED GATE OF MOSFET

  • US 20150037968A1
  • Filed: 09/06/2013
  • Published: 02/05/2015
  • Est. Priority Date: 08/05/2013
  • Status: Active Grant
First Claim
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1. A method for forming a shielded gate of a MOSFET, comprising steps of:

  • (a) providing a semiconductor substrate having at least one trench;

    (b) forming a bottom gate oxide region and a shielded gate poly region in said trench of said semiconductor substrate;

    (c) forming an inter-poly oxide region on said shielded gate poly region through high temperature plasma deposition, poly etching back and oxide etching back; and

    (d) forming a gate oxide region and a gate poly region on said inter-poly oxide region.

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