SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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Accused Products
Abstract
An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.
1 Citation
17 Claims
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1. (canceled)
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2. A semiconductor device comprising:
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a driver circuit portion comprising a transistor; and a pixel portion comprising a capacitor, wherein the transistor comprises; an oxide semiconductor layer; an insulating layer over and in contact with the oxide semiconductor layer; and a transparent conductive layer over the insulating layer, wherein one of electrodes of the capacitor is a same material as the transparent conductive layer. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a driver circuit portion comprising a first transistor; and a pixel portion comprising a second transistor and a capacitor; wherein the first transistor comprises; a first oxide semiconductor layer; an insulating layer over and in contact with the first oxide semiconductor layer; and a transparent conductive layer over the insulating layer, wherein the second transistor comprises; a second oxide semiconductor layer; and the insulating layer over and in contact with the second oxide semiconductor layer, wherein the transparent conductive layer does not overlap a channel formation region of the second transistor, and wherein one of electrodes of the capacitor is a same material as the transparent conductive layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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Specification