×

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

  • US 20150041816A1
  • Filed: 07/31/2014
  • Published: 02/12/2015
  • Est. Priority Date: 08/07/2013
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device, comprising:

  • a semiconductor body, having a first surface;

    a gate electrode structure, which comprises polycrystalline silicon, of an insulated gate field effect transistor (IGFET) in a first trench extending from the first surface into the semiconductor body; and

    a semiconductor element, which is different from the gate electrode structure of the IGFET and comprises polycrystalline silicon, in a second trench extending from the first surface into the semiconductor body,wherein the polycrystalline silicon of the IGFET and of the semiconductor element different therefrom ends below a top side of an insulation layer adjoining the first surface of the semiconductor body.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×