SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
First Claim
1. A semiconductor device, comprising:
- a semiconductor body, having a first surface;
a gate electrode structure, which comprises polycrystalline silicon, of an insulated gate field effect transistor (IGFET) in a first trench extending from the first surface into the semiconductor body; and
a semiconductor element, which is different from the gate electrode structure of the IGFET and comprises polycrystalline silicon, in a second trench extending from the first surface into the semiconductor body,wherein the polycrystalline silicon of the IGFET and of the semiconductor element different therefrom ends below a top side of an insulation layer adjoining the first surface of the semiconductor body.
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Accused Products
Abstract
The disclosure relates to a semiconductor device including a semiconductor body, having a first surface, a gate electrode structure, which includes polycrystalline silicon, of an IGFET in a first trench extending from the first surface into the semiconductor body. The device also includes a semiconductor element, which is different from the gate electrode structure of the IGFET and includes polycrystalline silicon, in a second trench extending from the first surface into the semiconductor body, wherein the polycrystalline silicon of the IGFET and of the semiconductor element different therefrom ends below a top side of an insulation layer adjoining the first surface of the semiconductor body.
44 Citations
21 Claims
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1. A semiconductor device, comprising:
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a semiconductor body, having a first surface; a gate electrode structure, which comprises polycrystalline silicon, of an insulated gate field effect transistor (IGFET) in a first trench extending from the first surface into the semiconductor body; and a semiconductor element, which is different from the gate electrode structure of the IGFET and comprises polycrystalline silicon, in a second trench extending from the first surface into the semiconductor body, wherein the polycrystalline silicon of the IGFET and of the semiconductor element different therefrom ends below a top side of an insulation layer adjoining the first surface of the semiconductor body. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for producing a gate electrode structure of an insulated gate field effect transistor (IGFET) and of a semiconductor element, which is different from the gate electrode structure of the IGFET, in a semiconductor device, comprising:
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forming a first trench for the gate electrode structure of the IGFET and a second trench for the semiconductor element in a semiconductor body, applying polycrystalline silicon on the surface of the semiconductor body until the first trench and the second trench are filled, carrying out a chemical mechanical polishing act in order to remove polycrystalline silicon present above the first trench and the second trench, such that the polycrystalline silicon of the gate electrode structure in the first trench and the polycrystalline silicon of the semiconductor element in the second trench are separated from one another. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21)
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Specification