SEMICONDUCTOR LIGHT EMITTING DEVICE
First Claim
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1. A semiconductor light emitting device, comprising:
- a substrate;
a reflective layer including at least two porous layers alternately disposed on the substrate and having different porosities; and
a light emitting structure disposed on the reflective layer and including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer.
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Abstract
A semiconductor light emitting device includes a substrate, a reflective layer and a light emitting structure. The reflective layer includes at least two porous layers alternately disposed on the substrate and having different porosities. The light emitting structure is disposed on the reflective layer and includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer.
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Citations
19 Claims
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1. A semiconductor light emitting device, comprising:
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a substrate; a reflective layer including at least two porous layers alternately disposed on the substrate and having different porosities; and a light emitting structure disposed on the reflective layer and including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 19)
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15. A semiconductor light emitting device, comprising:
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a light shielding substrate; a light emitting structure disposed above the light shielding substrate; and a reflective layer including at least two porous layers having different porosities, disposed between the light shielding substrate and the light emitting structure. - View Dependent Claims (18)
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16. A semiconductor light emitting device, comprising:
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a substrate; a reflective layer including first, second and third porous layers that are alternately disposed on the substrate and have different porosities; and a light emitting structure disposed on the reflective layer and including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, wherein one of the first, second and third porous layers has a porosity of 0. - View Dependent Claims (17)
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Specification