HIGH-FREQUENCY MODULE

• US 20150042417A1
• Filed: 07/29/2014
• Published: 02/12/2015
• Est. Priority Date: 08/06/2013
• Status: Active Grant

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Murata Manufacturing Co Limited
• Inventors: ONODERA, Syuichi, YAMATO, Syuji, TAKEMURA, Tadaji
• Granted Patent: US 9,413,335 B2
• Time in Patent Office: Days
• US Class Current: 333/195
• CPC Class Codes: H03H 9/0009 using surface acoustic wave devices
• CPC Class Codes: H03H 9/0057 the balanced terminals being on the same side of the tracks
• CPC Class Codes: H03H 9/605 consisting of a ladder configuration
• CPC Class Codes: H03H 9/6433 Coupled resonator filters
• CPC Class Codes: H03H 9/6479 Capacitively coupled SAW resonator filters
• CPC Class Codes: H03H 9/6483 Ladder SAW filters
• CPC Class Codes: H03H 9/725 Duplexers

Abstract

A high-frequency module includes a multilayer substrate, a filter substrate, a cover layer, a connection electrode, and inductors. The filter substrate includes a first principal surface on which an IDT electrode included in a filter unit is disposed, and the first principal surface faces a mounting surface of the multilayer substrate. The cover layer is spaced apart from and opposite to the first principal surface of the filter substrate. The connection electrode connects the multilayer substrate and the filter substrate. One of the inductors is connected between the filter unit and a first external connection terminal. Another one of the inductors is connected between the filter unit and the ground. The inductors are disposed inside the multilayer substrate. The inductors are inductively coupled to each other.

Claims

1. A high-frequency module comprising:

a first external connection terminal;

a second external connection terminal;

a filter unit connected between the first and second external connection terminals;

a matching circuit connected between the filter unit and at least one of the first and second external connection terminals;

an inductor connected between the filter unit and a ground;

a multilayer substrate;

a flat filter substrate including a first principal surface on which an IDT electrode included in the filter unit is disposed, the first principal surface facing a mounting surface of the multilayer substrate;

a flat cover layer spaced apart from and opposite to the first principal surface of the filter substrate; and

a connection electrode having a configuration that protrudes from the first principal surface and that extends through the cover layer and connecting the multilayer substrate and the filter substrate;

wherein

the matching circuit is disposed inside the multilayer substrate or the cover layer; and

the inductor and the matching circuit are inductively or capacitively coupled to each other.

3. The high-frequency module according to claim 1, wherein the filter unit includes:

a first series connection terminal connected to the first external connection terminal;

a second series connection terminal connected to the second external connection terminal;

a shunt connection terminal connected to the ground with the inductor disposed therebetween;

a plurality of series connection type filter elements connected in series between the first series connection terminal and the second series connection terminal by a plurality of connection lines; and

a shunt connection type filter element having a first end connected to at least one of the connection lines and a second end connected to the shunt connection terminal.

4. The high-frequency module according to claim 1, wherein the inductively or capacitively coupled inductor and matching circuit are inductively or capacitively coupled so as to allow an impedance outside a pass band of the filter unit to change.

6. The high-frequency module according to claim 1, wherein the matching circuit is a series connection type matching circuit connected in series between the first external connection terminal and the first series connection terminal or connected in series between the second external connection terminal and the second series connection terminal.

7. The high-frequency module according to claim 1, wherein the matching circuit is a shunt connection type matching circuit connected between the ground and the connection line connecting the first external connection terminal and the first series connection terminal or connected between the ground and the connection line connecting the second external connection terminal and the second series connection terminal.

8. The high-frequency module according to claim 3, wherein the filter unit includes a third terminal and a second filter unit;

and

the second filter unit is connected between the third terminal and the connection line connecting the first series connection terminal and the filter element connected to the first series connection terminal.

9. The high-frequency module according to claim 1, wherein the inductor is mounted on the mounting surface of the multilayer substrate or disposed inside the multilayer substrate;

and

the inductor and the matching circuit are adjacent to or close to each other.

10. The high-frequency module according to claim 1, wherein the inductor is disposed inside the cover layer, and the inductor and the matching circuit are adjacent to or close to each other.

11. The high-frequency module according to claim 1, wherein both of the inductor and the matching circuit are disposed inside the multilayer substrate or inside the cover layer.

12. The high-frequency module according to claim 11, wherein the inductor and the matching circuit are disposed on different layers.

13. The high-frequency module according to claim 1, wherein the inductor and the matching circuit at least partly overlap each other as seen in a plan view.

14. The high-frequency module according to claim 1, further comprising a ground electrode disposed between the inductor and the matching circuit.

2. A high-frequency module comprising:

a first external connection terminal;

a second external connection terminal;

a filter unit connected between the first and second external connection terminals;

a matching circuit connected between the filter unit and at least one of the first and second external connection terminals;

an inductor connected between the filter unit and a ground;

a multilayer substrate;

a flat filter substrate including a first principal surface on which an IDT electrode included in the filter unit is disposed, the first principal surface being spaced apart from and opposite to a mounting surface of the multilayer substrate;

a connection electrode having a configuration that protrudes from the first principal surface and connecting the multilayer substrate and the filter substrate; and

a resin layer surrounding the mounting surface of the multilayer substrate provided with the filter substrate;

wherein

the matching circuit is disposed inside the multilayer substrate; and

the inductor and the matching circuit are inductively or capacitively coupled to each other.

5. The high-frequency module according to claim 2, wherein the inductively or capacitively coupled inductor and matching circuit are inductively or capacitively coupled so as to allow a frequency at an attenuation pole outside a pass band of the filter unit to change.

15. The high-frequency module according to claim 2, wherein both of the inductor and the matching circuit are disposed inside the multilayer substrate.

16. The high-frequency module according to claim 15, wherein the inductor and the matching circuit are disposed on different layers.

17. The high-frequency module according to claim 2, wherein the inductor and the matching circuit at least partly overlap each other as seen in a plan view.

18. The high-frequency module according to claim 2, further comprising a ground electrode disposed between the inductor and the matching circuit.