METHODS AND APPARATUS FOR DETERMINING FOCUS

• US 20150042984A1
• Filed: 08/04/2014
• Published: 02/12/2015
• Est. Priority Date: 08/10/2013
• Status: Active Grant

• Current Assignee: KLA-Tencor Corporation
• Original Assignee: KLA-Tencor Corporation
• Inventors: Pandev, Stilian Ivanov
• Granted Patent: US 9,383,661 B2
• Time in Patent Office: Days
• US Class Current: 356/124
• CPC Class Codes: G03F 7/70641 Focus
• CPC Class Codes: G03F 9/7026 Focusing

Abstract

Disclosed are apparatus and methods for determining optimal focus for a photolithography system. A plurality of optical signals are acquired from a particular target located in a plurality of fields on a semiconductor wafer, and the fields were formed using different process parameters, including different focus values. A feature is extracted from the optical signals related to changes in focus. A symmetric curve is fitted to the extracted feature of the optical signals as a function of focus. An extreme point in the symmetric curve is determined and reported as an optimal focus for use in the photolithography system.

Claims

1. A method of determining optimal focus for a photolithography system, the method comprising:

acquiring a plurality of optical signals from a particular target located in a plurality of fields on a semiconductor wafer, wherein the fields were formed using different process parameters, including different focus values;

extracting a feature from the optical signals related to changes in focus;

fitting a symmetric curve to the extracted feature of the optical signals as a function of focus; and

determining and reporting an extreme point in the symmetric curve as an optimal focus for use in the photolithography system.

2. The method of claim 1, wherein the extracted feature is a combination of one or more of the optical signals that is most sensitive to changes in focus, as compared to other combinations of one or more of the optical signals.

3. The method of claim 1, wherein the extracted feature is a linear combination of the optical signals.

4. The method of claim 1, wherein the extracted feature is a non-linear combination of the optical signals.

5. The method of claim 1, wherein the extracted feature is a plurality of second optical signals that are created from a transformation of the first optical signals.

6. The method of claim 5, wherein the transformation is accomplished using a principal component analysis (PCA), Independent Component Analysis (ICA), or Local Linear Embedding (LLE) algorithm.

7. The method of claim 6, wherein the transformation is accomplished using a principal component analysis (PCA) and the extracted feature is the second optical signals with respect to a first principal component resulting from the PCA transformation.

8. The method of claim 1, wherein the optical signals are acquired from a focus-exposure matrix (FEM) wafer.

9. The method of claim 1, wherein the symmetric curve fitted to the extracted feature is a parabola.

10. The method of claim 1, further comprising:

repeating the operations for acquiring, extracting, fitting, and determining and reporting for a plurality of wafers to determine a plurality of optimal focus; and

determining a relationship between an actual focus of the photolithography system and an optimal focus.

11. The method of claim 1, wherein the optical signals are acquired using one or more of the following:

spectroscopic ellipsometry, Mueller matrix spectroscopic ellipsometry, spectroscopic reflectometry, spectroscopic scatterometry, beam profile reflectometry, beam profile ellipsometry, a single wavelength, a single discrete wavelength range, or multiple discrete wavelength ranges.

12. A system for inspecting or measuring a specimen, comprising:

an illuminator for generating illumination;

illumination optics for directing the illumination towards a particular target located in a plurality of fields on a semiconductor wafer, wherein the fields were formed using different process parameters, including different focus values;

collection optics for directing a plurality of optical signals from the particular target located in the plurality of fields in response to the illumination to a detector system;

the detector system for acquiring the plurality of optical signals from the particular target from the plurality of fields in response to the illumination; and

a processor and memory configured for performing the following operations;

extracting a feature from the optical signals related to changes in focus;

fitting a symmetric curve to the extracted feature of the optical signals as a function of focus; and

determining and reporting an extreme point in the symmetric curve as an optimal focus for use in the photolithography system.

13. The system of claim 12, wherein the extracted feature is a combination of one or more of the optical signals that is most sensitive to changes in focus, as compared to other combinations of one or more of the optical signals.

14. The system of claim 12, wherein the extracted feature is a linear combination of the optical signals.

15. The system of claim 12, wherein the extracted feature is a non-linear combination of the optical signals.

16. The system of claim 12, wherein the extracted feature is a plurality of second optical signals that are created from a transformation of the first optical signals.

17. The system of claim 16, wherein the transformation is accomplished using a principal component analysis (PCA), Independent Component Analysis (ICA), or Local Linear Embedding (LLE) algorithm.

18. The system of claim 17, wherein the transformation is accomplished using a principal component analysis (PCA) and the extracted feature is the second optical signals with respect to a first principal component resulting from the PCA transformation.

19. The system of claim 12, wherein the optical signals are acquired from a focus-exposure matrix (FEM) wafer.

20. The system of claim 12, wherein the symmetric curve fitted to the extracted feature is a parabola.

21. The system of claim 12, wherein the processor and memory are further configured for:

repeating the operations for acquiring, extracting, fitting, and determining and reporting for a plurality of wafers to determine a plurality of optimal focus; and

determining a relationship between an actual focus of the photolithography system and an optimal focus.

22. The system of claim 12, wherein the optical signals are acquired using one or more of the following:

spectroscopic ellipsometry, Mueller matrix spectroscopic ellipsometry, spectroscopic reflectometry, spectroscopic scatterometry, beam profile reflectometry, beam profile ellipsometry, a single wavelength, a single discrete wavelength range, or multiple discrete wavelength ranges.

23. The system of claim 12 in the form of an ellipsometer, the system further comprising:

a polarization state generator for producing a polarized state in the illumination; and

a polarization state analyzer for analyzing a polarized state of the optical signals.