POST-CMP FORMULATION HAVING IMPROVED BARRIER LAYER COMPATIBILITY AND CLEANING PERFORMANCE

• US 20150045277A1
• Filed: 03/14/2013
• Published: 02/12/2015
• Est. Priority Date: 03/18/2012
• Status: Abandoned Application

• Current Assignee: Entegris Incorporated
• Original Assignee: Entegris Incorporated
• Inventors: Liu, Jun, Hurd, Trace Quentin, Sun, Laisheng, Medd, Steven, Jenq, Shrane Ning
• Application Number:
  US14/385,946
• Publication Number:
  US 20150045277A1
• Time in Patent Office: Days
• US Class Current: 510/175
• CPC Class Codes: C11D 2111/22 Electronic devices, e.g. PCBs or semiconductors
• CPC Class Codes: C11D 3/0042 Reducing agents
• CPC Class Codes: C11D 3/0073 Anticorrosion compositions
• CPC Class Codes: C11D 7/265 Carboxylic acids or salts thereof
• CPC Class Codes: C11D 7/268 Carbohydrates or derivatives thereof
• CPC Class Codes: C11D 7/3209 Amines or imines with one to four nitrogen atoms; Quaternized amines
• CPC Class Codes: C11D 7/3218 Alkanolamines or alkanolimines
• CPC Class Codes: C11D 7/3245 Aminoacids
• CPC Class Codes: C11D 7/3281 Heterocyclic compounds
• CPC Class Codes: C11D 7/34 containing sulfur
• CPC Class Codes: H01L 21/02074 the processing being a planarization of conductive layers
• CPC Class Codes: H01L 21/7684 Smoothing; Planarisation
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one azole corrosion inhibitor, at least one reducing agent, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers, wherein the barrier layers are substantially devoid of tantalum or titanium.

Claims

1. A method of removing residue and contaminants from a microelectronic device having said residue and contaminants thereon, said method comprising contacting the microelectronic device with a cleaning composition for sufficient time to at least partially clean said residue and contaminants from the microelectronic device, wherein the cleaning composition includes at least one quaternary base, at least one amine, at least one azole corrosion inhibitor, at least one reducing agent, and at least one solvent, wherein the microelectronic device comprises exposed barrier layer that reduces diffusion of copper into low-k dielectric materials.

3. The method of claim 1, wherein the residue is selected from the group consisting of post-CMP residue, post-etch residue, and post-ash residue.

4. The method of claim 1, wherein the cleaning compositions are substantially devoid of oxidizing agents;

fluoride-containing sources;

abrasive materials;

gallic acid;

alkali and/or alkaline earth metal bases;

organic solvents;

purines and purine-derivatives;

amidoxime;

cyanuric acid;

triaminopyrimidine;

barbituric acid and derivatives thereof;

glucuronic acid;

squaric acid;

pyruvic acid;

phosphonic acid and derivatives thereof;

phenanthroline;

glycine;

nicotinamide and derivatives thereof;

flavonoids such as flavonols and anthocyanins and derivatives thereof; and

combinations thereof, prior to removal of residue material from the microelectronic device.

5. The method of claim 1, wherein the at least one azole comprises a species selected from the group consisting of benzotriazole, 1,2,4-triazole (TAZ), tolyltriazole, 5-phenyl-benzotriazole, 5-nitro-benzotriazole, 3-amino-5-mercapto-1,2,4-triazole, 1-amino-1,2,4-triazole, hydroxybenzotriazole, 2-(5-amino-pentyl)-benzotriazole, 1,2,3-triazole, 1-amino-1,2,3-triazole, 1-amino-5-methyl-1,2,3-triazole, 3-amino-1,2,4-triazole, 3-mercapto-1,2,4-triazole, 3-isopropyl-1,2,4-triazole, 5-phenylthiol-benzotriazole, halo-benzotriazoles (halo=F, Cl, Br or I), naphthotriazole, 2-mercaptobenzimidazole (MBI), 2-mercaptobenzothiazole, 4-methyl-2-phenylimidazole, 5-aminotetrazole, 5-amino-1,3,4-thiadiazole-2-thiol, thiazole, methyltetrazole, 1,5-pentamethylenetetrazole, 1-phenyl-5-mercaptotetrazole, 4-methyl-4H-1,2,4-triazole-3-thiol, 5-amino-1,3,4-thiadiazole-2-thiol, benzothiazole, imidazole, indiazole, and combinations thereof.

7. The method of claim 1, wherein the at least one amine comprises a species selected from the group consisting of aminoethylethanolamine, N-methylamino ethanol, aminoethoxyethanol, dimethylaminoethoxyethanol, diethanolamine, N-methyldiethanolamine, monoethanolamine, triethanolamine, 1-amino-2-propanol, 2-amino-1-butanol, isobutanolamine, triethylenediamine, tetraethylenepentamine (TEPA), 4-(2-hydroxyethyl)morpholine (HEM), N-aminoethylpiperazine (N-AEP), ethylenediaminetetraacetic acid (EDTA), 1,2-cyclohexanediamine-N,N,N′

,N′

-tetraacetic acid (CDTA), iminodiacetic acid (IDA), 2-(hydroxyethyl)iminodiacetic acid (HIDA), nitrilotriacetic acid, and combinations thereof.

9. The method of claim 1, wherein the at least one quaternary base comprises a species selected from the group consisting of tetramethylammonium hydroxide (TMAH), tetrapropylammonium hydroxide (TPAH), tetrabutylammonium hydroxide, tetraethylammonium hydroxide, benzyltriethylammonium hydroxide, benzyltrimethylammonium hydroxide, tributylmethylammonium hydroxide, ammonium hydroxide, choline hydroxide, tetrabutylphosphonium hydroxide (TBPH), (2-hydroxyethyl) trimethylammonium hydroxide, (2-hydroxyethyl) triethylammonium hydroxide, (2-hydroxyethyl) tripropylammonium hydroxide, (1-hydroxypropyl) trimethylammonium hydroxide, ethyltrimethylammonium hydroxide, diethyldimethylammonium hydroxide (DEDMAH), and combinations thereof.

11. The method of claim 1, wherein the at least one reducing agent comprises a species selected from the group consisting of ascorbic acid, L(+)-ascorbic acid, isoascorbic acid, ascorbic acid derivatives, and combinations thereof.

13. The method of claim 1, wherein the at least one solvent comprises water.

14. The method of claim 1, wherein the pH of the cleaning compositions are in a range from about 10 to greater than 14.

16. The method of claim 1, comprising tetramethylammonium hydroxide, monoethanolamine, 1,2,4-triazole, ascorbic acid, and water.

17. The method of claim 1, wherein the cleaning composition further comprises at least one complexing agent.

18. The method of claim 17, wherein the at least one complexing agent comprises a species selected from the group consisting of acetic acid, acetone oxime, acrylic acid, adipic acid, alanine, arginine, asparagine, aspartic acid, betaine, dimethyl glyoxime, formic acid, fumaric acid, gluconic acid, glutamic acid, glutamine, glutaric acid, glyceric acid, glycerol, glycolic acid, glyoxylic acid, histidine, iminodiacetic acid, isophthalic acid, itaconic acid, lactic acid, leucine, lysine, maleic acid, maleic anhydride, malic acid, malonic acid, mandelic acid, 2,4-pentanedione, phenylacetic acid, phenylalanine, phthalic acid, proline, propionic acid, pyrocatecol, pyromellitic acid, quinic acid, serine, sorbitol, succinic acid, tartaric acid, terephthalic acid, trimellitic acid, trimesic acid, tyrosine, valine, xylitol, salts and derivatives thereof, 4-(2-hydroxyethyl)morpholine (HEM), ethylenediaminetetraacetic acid (EDTA), 1,2-cyclohexanediamine-N,N,N′

,N′

-tetraacetic acid (CDTA), m-xylenediamine (MXDA), glycine/ascorbic acid, iminodiacetic acid (IDA), 2-(hydroxyethyl)iminodiacetic acid (HIDA), nitrilotriacetic acid, thiourea, 1,1,3,3-tetramethylurea, urea, urea derivatives, uric acid, glycine, alanine, arginine, asparagine, aspartic acid, cysteine, glutamic acid, glutamine, histidine, isoleucine, leucine, lysine, methionine, phenylalanine, proline, serine, threonine, tryptophan, tyrosine, valine, and combinations thereof.

20. The method of claim 1, wherein the exposed barrier layer comprises at least one species selected from the group consisting of ruthenium (Ru), cobalt (Co), tungsten (W), molybdenum (Mo), rhenium (Rh), manganese (Mn), alloys thereof, and combinations thereof.

21. The method of claim 3, wherein said post-CMP residue comprises material selected from the group consisting of particles from a CMP polishing slurry, chemicals present in the CMP polishing slurry, reaction by-products of the CMP polishing slurry, carbon-rich particles, polishing pad particles, brush deloading particles, equipment materials of construction particles, copper, copper oxides, and combinations thereof.

22. The method of claim 1, wherein said contacting comprises conditions selected from the group consisting of:

time of from about 15 seconds to about 5 minutes;

temperature in a range of from about 20°

C. to about 50°

C.; and

combinations thereof.

23. The method of claim 1, further comprising diluting the cleaning composition with solvent at or before a point of use.

24. The method of claim 23, wherein said solvent comprises water.

25. The method of claim 1, wherein the microelectronic device comprises copper-containing material.

26. The method of claim 1, further comprising rinsing the microelectronic device with deionized water following contact with the cleaning composition.

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