METHOD FOR APPLYING A TEMPORARY BONDING LAYER

• US 20150047784A1
• Filed: 12/16/2013
• Published: 02/19/2015
• Est. Priority Date: 12/21/2012
• Status: Abandoned Application

• Current Assignee: EV Group E Thallner GmbH (Thallner Privatstiftung)
• Original Assignee: EV Group E Thallner GmbH (Thallner Privatstiftung)
• Inventors: Burggraf, Jurgen
• Application Number:
  US14/388,107
• Publication Number:
  US 20150047784A1
• Time in Patent Office: Days
• US Class Current: 156/308.2
• CPC Class Codes: C23C 16/01 on temporary substrates, e.g. substrates subsequently removed by etching
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: C25D 5/48 After-treatment of electroplated surfaces
• CPC Class Codes: H01L 21/673 using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders holders for supporting a complete device in operation H01L23/32
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68318 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2221/6834 used to protect an active side of a device or wafer
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Abstract

A method for applying a temporary bonding layer to a carrier wafer for temporary joining to a product wafer by fusion bonding or anodic bonding, said method comprising:

• • applying a temporary bonding layer which is suitable for fusion bonding or anodic bonding to the carrier wafer and
  • modifying the temporary bonding layer during and/or after application such that the temporary connection of the temporary bonding layer can be broken.

Claims

1. A method for applying a temporary bonding layer to a carrier wafer for temporary bonding to a product wafer by fusion bonding or anodic bonding, said method comprising:

applying a temporary bonding layer which is suitable for fusion bonding or anodic bonding to the carrier wafer and

modifying the temporary bonding layer during and/or after application such that the temporary bonding of the temporary bonding layer can be broken.

2. The method as claimed in claim 1, wherein the step of modifying takes place by surface treatment by changing the microstructure of the temporary bonding layer.

3. The method as claimed in claim 1, wherein the step of applying takes place by CVD and/or PVD processes or electrochemical deposition.

4. The method as claimed in claim 1, wherein the temporary bonding layer is comprised of SiO₂.

5. The method as claimed in claim 1, wherein the step of modifying encompasses a formation of channels which penetrate the temporary bonding layer parallel to the carrier wafer.

6. The method as claimed in claim 1, wherein there is porosity of the temporary bonding layer for modification of the temporary bonding layer when the temporary bonding layer is applied by means of CVD methods and gases are enclosed in the pores of the temporary bonding layer by exposure to a gas during the CVD process.

7. The method as claimed in claim 1, wherein after application and modification a temporary bonding of the carrier wafer to the product wafer with a bond force F_b takes place by fusion bonding.

8. The method as claimed in claim 7, wherein after the temporary bonding, the product wafer is processed and during and/or after processing a weakening of the temporary bonding layer for detachment of the product wafer takes place.