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SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20150048382A1
  • Filed: 04/17/2013
  • Published: 02/19/2015
  • Est. Priority Date: 04/19/2012
  • Status: Active Grant
First Claim
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1. A silicon carbide semiconductor device comprising:

  • a first or second conductivity type substrate that is made of silicon carbide;

    a drift layer that is disposed on the substrate, and made of a first conductivity type silicon carbide lower in impurity concentration than the substrate;

    a base region that is disposed on the drift layer, and made of a second conductivity type silicon carbide;

    a source region that is disposed on the base region, and made of a first conductivity type silicon carbide higher in impurity concentration than the drift layer;

    a contact region that is connected to the base region, and made of a second conductivity type silicon carbide higher in impurity concentration than the base layer;

    a trench that extends to a position deeper than the base region from a surface of the source region;

    a second conductivity type layer that is disposed in a corner of a bottom of the trench, made of a second conductivity type silicon carbide, and has a triangular round shape in cross-section taken along a depth direction of the trench;

    a gate insulating film that is disposed on an inner wall surface of the trench on the second conductivity type layer;

    a gate electrode that is disposed on the gate insulating film within the trench;

    a source electrode that is electrically connected to the base region through the source region and the contact region; and

    a drain electrode that is disposed on a rear side of the substrate,wherein the silicon carbide semiconductor device is provided with a semiconductor switching element with an inversion type switching element that forms an inversion type channel region on a surface portion of the base region located on a side surface of the trench by controlling an application voltage to the gate electrode, and allows a current to flow between the source electrode and the drain electrode through the source region and the drift layer.

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