GOLD NANOISLAND ARRAYS

• US 20150049332A1
• Filed: 07/30/2014
• Published: 02/19/2015
• Est. Priority Date: 07/30/2013
• Status: Abandoned Application

• Current Assignee: Curators of the University of Missouri (University of Missouri)
• Original Assignee: Curators of the University of Missouri (University of Missouri)
• Inventors: Li, Hao, Sun, Xin
• Application Number:
  US14/447,220
• Publication Number:
  US 20150049332A1
• Time in Patent Office: Days
• US Class Current: 356/301
• CPC Class Codes: G01N 21/658 enhancement Raman, e.g. surface plasmons
• CPC Class Codes: Y10S 977/881 Microscopy or spectroscopy, e.g. sem, tem

Abstract

A substrate for facilitating enhanced SERS analysis, including a semiconducting substrate and a plurality of discrete metal nanostructures disposed on the semiconducting substrate to define an array. Each respective metal nanostructure is between about 10 nm and about 30 nm high and between about 15 nm and about 60 nm in diameter and two adjacent respective metal nanostructures are separated by a gap of between about 20 nm to about 50 nm.

Claims

1. A substrate for facilitating enhanced SERS analysis, comprising:

a first substrate surface; and

a plurality of discrete metal nanostructures disposed on the first substrate surface to define an array;

wherein each respective metal nanostructure is between about 10 nm and about 30 nm high and between about 15 nm and about 60 nm in diameter; and

wherein two adjacent respective metal nanostructures are separated by a gap of between about 20 nm to about 50 nm.

2. The substrate of claim 1 wherein the nanostructures are made from a material selected from the set including gold, silver, platinum, titanium, chromium, copper, nickel, and combinations thereof.

3. The device of claim 1 and further comprising a metallic coating partially filling in at least some of the gaps.

4. The device of claim 1 wherein the respective nanostructures are roughened to include secondary nanostructures extending therefrom.

5. The device of claim 4 wherein the secondary nanostructures are between about 5 nm and about 15 nm in diameter.

6. The device of claim 1 wherein the respective nanostructures are about 40 nm in diameter.

7. The device of claim 1 wherein the gaps are about 20 nanometers.

8. The device of claim 1 wherein the respective nanostructures are about 40 nm in diameter and wherein the gaps are about 20 nanometers.

9. The device of claim 1 wherein the nanostructures are gold.

10. The device of claim 9 wherein the gold nanostructures are substantially free of internal strain.

11. A surface enhanced Raman spectroscopy device, comprising:

a base substrate;

a plurality of gold nanostructures formed on the substrate; and

a plurality of gaps interspersed between the respective gold nanoparticles;

wherein the nanoparticles are about 40 nm across; and

wherein the gaps are about 20 nm across.

12. A method of producing a surface enhanced Raman spectroscopy device, comprising:

a) forming a plurality of gold nanostructures on a base substrate;

b) annealing the plurality of gold nanostructures;

c) increasing the size of the gold structures to define a plurality of second generation gold structures;

d) annealing the plurality of second generation gold nanostructures;

e) increasing the size of the second generation gold structures to define a plurality of third generation gold nanostructures; and

f) annealing the third generation gold nanostructures;

wherein the plurality of third generation gold nanostructures defines a plurality of gaps therebetween;

wherein each respective gap is between two or more adjacent gold nanostructures;

wherein each respective gold nanostructure is between about 30 nm and about 60 nm across;

wherein each respective gold nanostructure is between about 20 nm and about 30 nm in height.

13. The method of claim 12 wherein a), c), and e) are performed by sputtering a gold film of 5 nm nominal thickness onto a silicon substrate.

14. The device of claim 12 wherein b), d) and f) are performed by heating the substrate to 200 degrees Celsius for 2 hours in a forming gas atmosphere.

15. A method of producing a SERS device, comprising:

a) sputtering metal onto a base silicon substrate to define a first plurality of metal nanostructures; and

b) annealing the first plurality of metal nanostructures to define a plurality of first generation metal nanostructures;

wherein the plurality of first generation metal nanostructures are substantially evenly distributed;

wherein the plurality of first generation nanostructures define a plurality of substantially evenly distributed gaps therebetween;

wherein each respective first generation metal nanostructure is about 15 nm in diameter and about 10 nm high; and

wherein each respective gap contains between 0 and about 5 nm thick metal.

16. The method of claim 15 and further comprising:

c) sputtering metal onto a the plurality of first generation metal nanostructures to define a second plurality of metal nanostructures; and

d) annealing the second plurality of metal nanostructures to define a plurality of second generation metal nanostructures;

wherein each respective second generation metal nanostructure is about 25 nm in diameter and about 15 nm high; and

wherein each respective gap contains between 0 and about 10 nm thick metal.

17. The method of claim 16 and further comprising:

e) sputtering metal onto a the plurality of second generation metal nanostructures to define a third plurality of metal nanostructures; and

f) annealing the third plurality of metal nanostructures to define a plurality of third generation metal nanostructures;

wherein each respective third generation metal nanostructure is about 40 nm in diameter and about 25 nm high; and

wherein each respective gap contains between 0 and about 15 nm thick metal.

18. The method of claim 17 and further comprising:

g) sputtering a layer of metal between about 5 nm and about 10 nm thick onto a the plurality of third generation metal nanostructures to define a plurality of roughened nanostructures.

19. The method of claim 15 wherein the metal is selected from the group including gold, silver, platinum, copper, nickel, and combinations thereof.

20. The method of claim 17 wherein each respective third generation nanostructure includes layers of dissimilar metals.