NON-VOLATILE SEMICONDUCTOR STORAGE APPARATUS

• US 20150052414A1
• Filed: 10/30/2014
• Published: 02/19/2015
• Est. Priority Date: 07/31/2012
• Status: Active Grant

• Current Assignee: Kioxia Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: IGARI, Fubito, Suto, Hiroyuki, Ozawa, Yasuyuki
• Granted Patent: US 9,940,192 B2
• Time in Patent Office: Days
• US Class Current: 714/764
• CPC Class Codes: G06F 11/1008 in individual solid state devices G06F11/1004 takes precedence
• CPC Class Codes: G06F 11/1048 using arrangements adapted for a specific error detection or correction feature
• CPC Class Codes: G06F 3/0619 in relation to data integrity, e.g. data losses, bit errors
• CPC Class Codes: G06F 3/0653 Monitoring storage devices or systems
• CPC Class Codes: G06F 3/0679 Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
• CPC Class Codes: G11C 2029/0411 Online error correction
• CPC Class Codes: G11C 7/04 with means for avoiding disturbances due to temperature effects

Abstract

According to one embodiment, a non-volatile semiconductor storage apparatus is configured to decide determination periods respectively corresponding to each of management blocks based on rewrite count information items and a temperature, and to perform a determination processing for each of management blocks for each determination period. The determination processing includes determining whether first data read from a block in the blocks is normal based on the number of errors that are occurred in the first data. The apparatus is configured to perform a rewrite processing of rewriting the first data to second data which is error-corrected when it is determined that the first data is not normal.

Claims

1. A non-volatile semiconductor storage apparatus comprising:

a non-volatile semiconductor memory; and

a rewrite module configured to, each time the apparatus is powered, perform rewrite processing of correcting an error of data read out from the non-volatile semiconductor memory and to write the corrected data to the non-volatile semiconductor memory.

2. The apparatus of claim 1, wherein the rewrite module is configured to start the rewrite processing in accordance with an instruction from a host.

3. The apparatus of claim 2, further comprising a storage module configured to store execution condition information representing whether the rewrite processing starts in accordance with the instruction host or the rewrite processing is started after the apparatus is powered without the instruction.

4. A non-volatile semiconductor storage apparatus comprising:

a non-volatile semiconductor memory in which data is erased for each erase unit;

a sensor configured to measure a temperature; and

a controller,

wherein the controller is configured to decide, a confirmation period of a management block comprising at least one erase unit based on a rewrite count of the management block and temperature information measured by the sensor, and to confirm data stored in the management block for the confirmation period.