Methods for Selectively Modifying RF Current Paths in a Plasma Processing System
First Claim
1. A method for compensating for azimuthal non-uniformity in a plasma processing system having a plasma processing chamber, comprising:
- measuring, using at least one sensor associated with said chamber, indicia of said azimuthal non-uniformity; and
adjusting, responsive to said measuring, by selectively connecting a first RF path modifier of a plurality of RF path modifiers to a conductive portion of a lower electrode, whereby at least a second RF path modifier of said plurality of RF path modifiers is not connected to said conductive portion of said lower electrode after said adjusting and wherein said plurality of RF path modifiers are disposed in an insulator portion that is disposed in an RF current path between an RF current source and said conductive portion.
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Abstract
Methods and apparatus for modifying RF current path lengths are disclosed. Apparatus includes a plasma processing system having an RF power supply and a lower electrode having a conductive portion. There is included an insulative component disposed in an RF current path between the RF power supply and the conductive portion. There are included a plurality of RF path modifiers disposed within the insulative component, the plurality of RF path modifiers being disposed at different angular positions relative to a reference angle drawn from a center of the insulative component, whereby at least a first one of the plurality of RF path modifiers is electrically connected to the conductive portion and at least a second one of the plurality of the plurality of RF path modifiers is not electrically connected to the conductive portion.
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Citations
16 Claims
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1. A method for compensating for azimuthal non-uniformity in a plasma processing system having a plasma processing chamber, comprising:
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measuring, using at least one sensor associated with said chamber, indicia of said azimuthal non-uniformity; and adjusting, responsive to said measuring, by selectively connecting a first RF path modifier of a plurality of RF path modifiers to a conductive portion of a lower electrode, whereby at least a second RF path modifier of said plurality of RF path modifiers is not connected to said conductive portion of said lower electrode after said adjusting and wherein said plurality of RF path modifiers are disposed in an insulator portion that is disposed in an RF current path between an RF current source and said conductive portion. - View Dependent Claims (2, 3)
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4. A method for compensating for azimuthal non-uniformity in a plasma processing system having a plasma processing chamber, comprising:
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measuring, using at least one sensor associated with said chamber, indicia of said azimuthal non-uniformity; and adjusting, responsive to said measuring, by adjusting an impedance value of at least a first RF path modifier of a plurality of RF path modifiers to a first impedance value, whereby at least a second impedance value of a second RF path modifier of said plurality of RF path modifiers is different from said first impedance value after said adjusting and wherein said plurality of RF path modifiers are disposed in an insulator portion that is disposed in an RF current path between an RF current source and a conductive portion of a lower electrode in said plasma processing chamber. - View Dependent Claims (5, 6)
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7. A method for compensating for azimuthal non-uniformity in a plasma processing system having a plasma processing chamber, comprising:
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measuring, using at least one sensor associated with said chamber, indicia of said azimuthal non-uniformity; and adjusting, responsive to said measuring, by selectively adjusting one or more of RF path modifiers of a plurality of RF path modifiers conductively coupled to a conductive portion of a lower electrode and wherein said plurality of RF path modifiers are disposed in an insulator portion that is disposed in an RF current path between an RF current source and said conductive portion, and each of the plurality of RF path modifiers is individually adjustable to define an intentional non-symmetric impedance at different locations around the lower electrode to compensate for measured indicia of said azimuthal non-uniformity in the plasma processing system. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification